SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION

SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION

PROBLEM TO BE SOLVED: To obtain a semiconductor porcelain composition small in specific resistance and high in voltage resistance by adding a fine amount of ZrO2 to a barium titanate porcelain composition containing Ba, Sr, Ca, Pb, rare earth elements, Ti, Mn, and Si. SOLUTION: This semiconductor po...

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Hauptverfasser: HISHINUMA KAZUMICHI, ABE MOTOSHI
Format: Patent
Sprache:eng
Schlagworte:
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
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creator HISHINUMA KAZUMICHI
ABE MOTOSHI
description PROBLEM TO BE SOLVED: To obtain a semiconductor porcelain composition small in specific resistance and high in voltage resistance by adding a fine amount of ZrO2 to a barium titanate porcelain composition containing Ba, Sr, Ca, Pb, rare earth elements, Ti, Mn, and Si. SOLUTION: This semiconductor porcelain composition comprises (Ba1- P- Q- R- SSrPCaQPbRMS)TiXO3 (M is an element selected from rare earth elements), MnO2 and SiO2 , and further 100-2,000ppm of ZrO2 . The semiconductor porcelain composition is obtained by grinding the raw materials of the porcelain composition into particles having an average particle diameter of
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SOLUTION: This semiconductor porcelain composition comprises (Ba1- P- Q- R- SSrPCaQPbRMS)TiXO3 (M is an element selected from rare earth elements), MnO2 and SiO2 , and further 100-2,000ppm of ZrO2 . The semiconductor porcelain composition is obtained by grinding the raw materials of the porcelain composition into particles having an average particle diameter of &lt;=1μm with ZrO2 balls, molding the particles and subsequently sintering the molded product.</description><edition>6</edition><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19970624&amp;DB=EPODOC&amp;CC=JP&amp;NR=H09165259A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19970624&amp;DB=EPODOC&amp;CC=JP&amp;NR=H09165259A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HISHINUMA KAZUMICHI</creatorcontrib><creatorcontrib>ABE MOTOSHI</creatorcontrib><title>SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION</title><description>PROBLEM TO BE SOLVED: To obtain a semiconductor porcelain composition small in specific resistance and high in voltage resistance by adding a fine amount of ZrO2 to a barium titanate porcelain composition containing Ba, Sr, Ca, Pb, rare earth elements, Ti, Mn, and Si. SOLUTION: This semiconductor porcelain composition comprises (Ba1- P- Q- R- SSrPCaQPbRMS)TiXO3 (M is an element selected from rare earth elements), MnO2 and SiO2 , and further 100-2,000ppm of ZrO2 . The semiconductor porcelain composition is obtained by grinding the raw materials of the porcelain composition into particles having an average particle diameter of &lt;=1μm with ZrO2 balls, molding the particles and subsequently sintering the molded product.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALdvX1dPb3cwl1DvEPUgjwD3J29XH09FNw9vcN8A_2DPH091Nw9HNR8AwJVggI8gepAwrxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPA0tDM1MjU0tHY2LUAABP8Cij</recordid><startdate>19970624</startdate><enddate>19970624</enddate><creator>HISHINUMA KAZUMICHI</creator><creator>ABE MOTOSHI</creator><scope>EVB</scope></search><sort><creationdate>19970624</creationdate><title>SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION</title><author>HISHINUMA KAZUMICHI ; ABE MOTOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH09165259A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1997</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>HISHINUMA KAZUMICHI</creatorcontrib><creatorcontrib>ABE MOTOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HISHINUMA KAZUMICHI</au><au>ABE MOTOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION</title><date>1997-06-24</date><risdate>1997</risdate><abstract>PROBLEM TO BE SOLVED: To obtain a semiconductor porcelain composition small in specific resistance and high in voltage resistance by adding a fine amount of ZrO2 to a barium titanate porcelain composition containing Ba, Sr, Ca, Pb, rare earth elements, Ti, Mn, and Si. SOLUTION: This semiconductor porcelain composition comprises (Ba1- P- Q- R- SSrPCaQPbRMS)TiXO3 (M is an element selected from rare earth elements), MnO2 and SiO2 , and further 100-2,000ppm of ZrO2 . The semiconductor porcelain composition is obtained by grinding the raw materials of the porcelain composition into particles having an average particle diameter of &lt;=1μm with ZrO2 balls, molding the particles and subsequently sintering the molded product.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
title SEMICONDUCTOR PORCELAIN COMPOSITION AND ITS PRODUCTION
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