APPARATUS FOR PLASMA CHEMICAL VAPOR DEPOSITION
PURPOSE: To realize an apparatus capable of forming a dense thin film having a low defect density by sufficiently heating a reactional gas near a substrate. CONSTITUTION: This apparatus for plasma chemical vapor deposition is obtained by installing a gas heating pipe 14, arranged in a heater 3 for h...
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| creator | TAKEUCHI YOSHIAKI KOJO DAIICHI MURATA MASAYOSHI |
| description | PURPOSE: To realize an apparatus capable of forming a dense thin film having a low defect density by sufficiently heating a reactional gas near a substrate. CONSTITUTION: This apparatus for plasma chemical vapor deposition is obtained by installing a gas heating pipe 14, arranged in a heater 3 for heating a substrate and capable of introducing a reactional gas from a reactional gas introduction pipe 6 and discharging the reactional gas into a space between a high-frequency electrode 2 and the heater 3 for heating the substrate, thereby heating the reactional gas introduced into a reactional vessel 1 with the heater 3 for heating the substrate in passing the reactional gas through the gas heating pipe 14, thereby increasing the diffusion distance of reactional gas radicals adsorbed on the film surface and enabling the formation of a dense thin film having a low defect density in the apparatus for plasma chemical vapor deposition comprising the high-frequency electrode 2 and the heater 3 for heating the substrate, oppositely arranged in the reactional vessel 1 provided with the reactional gas introduction pipe 6 and a vent pipe 7 and forming parallel plate type electrodes. |
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CONSTITUTION: This apparatus for plasma chemical vapor deposition is obtained by installing a gas heating pipe 14, arranged in a heater 3 for heating a substrate and capable of introducing a reactional gas from a reactional gas introduction pipe 6 and discharging the reactional gas into a space between a high-frequency electrode 2 and the heater 3 for heating the substrate, thereby heating the reactional gas introduced into a reactional vessel 1 with the heater 3 for heating the substrate in passing the reactional gas through the gas heating pipe 14, thereby increasing the diffusion distance of reactional gas radicals adsorbed on the film surface and enabling the formation of a dense thin film having a low defect density in the apparatus for plasma chemical vapor deposition comprising the high-frequency electrode 2 and the heater 3 for heating the substrate, oppositely arranged in the reactional vessel 1 provided with the reactional gas introduction pipe 6 and a vent pipe 7 and forming parallel plate type electrodes.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; THEIR RELEVANT APPARATUS ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960409&DB=EPODOC&CC=JP&NR=H0891987A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960409&DB=EPODOC&CC=JP&NR=H0891987A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEUCHI YOSHIAKI</creatorcontrib><creatorcontrib>KOJO DAIICHI</creatorcontrib><creatorcontrib>MURATA MASAYOSHI</creatorcontrib><title>APPARATUS FOR PLASMA CHEMICAL VAPOR DEPOSITION</title><description>PURPOSE: To realize an apparatus capable of forming a dense thin film having a low defect density by sufficiently heating a reactional gas near a substrate. 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CONSTITUTION: This apparatus for plasma chemical vapor deposition is obtained by installing a gas heating pipe 14, arranged in a heater 3 for heating a substrate and capable of introducing a reactional gas from a reactional gas introduction pipe 6 and discharging the reactional gas into a space between a high-frequency electrode 2 and the heater 3 for heating the substrate, thereby heating the reactional gas introduced into a reactional vessel 1 with the heater 3 for heating the substrate in passing the reactional gas through the gas heating pipe 14, thereby increasing the diffusion distance of reactional gas radicals adsorbed on the film surface and enabling the formation of a dense thin film having a low defect density in the apparatus for plasma chemical vapor deposition comprising the high-frequency electrode 2 and the heater 3 for heating the substrate, oppositely arranged in the reactional vessel 1 provided with the reactional gas introduction pipe 6 and a vent pipe 7 and forming parallel plate type electrodes.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | APPARATUS FOR PLASMA CHEMICAL VAPOR DEPOSITION |
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