PRODUCTION OF THIN FILM AND APPARATUS FOR PRODUCTION OF THIN FILM BY LASER VAPOR DEPOSITION METHOD
PURPOSE: To easily and safely produce members for microwave and milliwave devices having high reliability by forming specific oxide high-temp. superconductor thin films by a laser vapor deposition method on both surfaces of a substrate consisting of MgO, etc., within a vacuum vessel. CONSTITUTION: T...
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| creator | ITOZAKI HIDEO NAGAISHI RYUKI |
| description | PURPOSE: To easily and safely produce members for microwave and milliwave devices having high reliability by forming specific oxide high-temp. superconductor thin films by a laser vapor deposition method on both surfaces of a substrate consisting of MgO, etc., within a vacuum vessel. CONSTITUTION: The MgO single crystal substrate 208 is supported by a holder 210 longitudinally in the vacuum chamber 202 and both surfaces thereof are heated to, for example, 650 to 700 deg.C by heaters 216. Next, a laser beam 230 from a laser oscillator 222 is introduced via respective condenser lenses 229a, 229b of a half mirror 224 and a mirror 228 from incident windows 220a, 220b into the vacuum chamber 202, Two pieces of targets 212a, 212b which are rotationally moved by motors 236a, 236b and are composed of YBa2 Cu3 O7-x are irradiated with the laser beams 232a, 232b in the positions deviating from the central axes of rotation thereof, by which both targets are heated to evaporate. The thin films consisting of the YBa2 Cu3 O7-x as the oxide high-temp. superconductor are deposited on both surfaces of the substrate 208 while periodic vibration is applied thereto by a motor 256. |
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The thin films consisting of the YBa2 Cu3 O7-x as the oxide high-temp. superconductor are deposited on both surfaces of the substrate 208 while periodic vibration is applied thereto by a motor 256.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WAVEGUIDES</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960924&DB=EPODOC&CC=JP&NR=H08246134A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960924&DB=EPODOC&CC=JP&NR=H08246134A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITOZAKI HIDEO</creatorcontrib><creatorcontrib>NAGAISHI RYUKI</creatorcontrib><title>PRODUCTION OF THIN FILM AND APPARATUS FOR PRODUCTION OF THIN FILM BY LASER VAPOR DEPOSITION METHOD</title><description>PURPOSE: To easily and safely produce members for microwave and milliwave devices having high reliability by forming specific oxide high-temp. superconductor thin films by a laser vapor deposition method on both surfaces of a substrate consisting of MgO, etc., within a vacuum vessel. CONSTITUTION: The MgO single crystal substrate 208 is supported by a holder 210 longitudinally in the vacuum chamber 202 and both surfaces thereof are heated to, for example, 650 to 700 deg.C by heaters 216. Next, a laser beam 230 from a laser oscillator 222 is introduced via respective condenser lenses 229a, 229b of a half mirror 224 and a mirror 228 from incident windows 220a, 220b into the vacuum chamber 202, Two pieces of targets 212a, 212b which are rotationally moved by motors 236a, 236b and are composed of YBa2 Cu3 O7-x are irradiated with the laser beams 232a, 232b in the positions deviating from the central axes of rotation thereof, by which both targets are heated to evaporate. 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NAGAISHI RYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH08246134A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WAVEGUIDES</topic><toplevel>online_resources</toplevel><creatorcontrib>ITOZAKI HIDEO</creatorcontrib><creatorcontrib>NAGAISHI RYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITOZAKI HIDEO</au><au>NAGAISHI RYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF THIN FILM AND APPARATUS FOR PRODUCTION OF THIN FILM BY LASER VAPOR DEPOSITION METHOD</title><date>1996-09-24</date><risdate>1996</risdate><abstract>PURPOSE: To easily and safely produce members for microwave and milliwave devices having high reliability by forming specific oxide high-temp. superconductor thin films by a laser vapor deposition method on both surfaces of a substrate consisting of MgO, etc., within a vacuum vessel. CONSTITUTION: The MgO single crystal substrate 208 is supported by a holder 210 longitudinally in the vacuum chamber 202 and both surfaces thereof are heated to, for example, 650 to 700 deg.C by heaters 216. Next, a laser beam 230 from a laser oscillator 222 is introduced via respective condenser lenses 229a, 229b of a half mirror 224 and a mirror 228 from incident windows 220a, 220b into the vacuum chamber 202, Two pieces of targets 212a, 212b which are rotationally moved by motors 236a, 236b and are composed of YBa2 Cu3 O7-x are irradiated with the laser beams 232a, 232b in the positions deviating from the central axes of rotation thereof, by which both targets are heated to evaporate. The thin films consisting of the YBa2 Cu3 O7-x as the oxide high-temp. superconductor are deposited on both surfaces of the substrate 208 while periodic vibration is applied thereto by a motor 256.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WAVEGUIDES |
| title | PRODUCTION OF THIN FILM AND APPARATUS FOR PRODUCTION OF THIN FILM BY LASER VAPOR DEPOSITION METHOD |
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