METHOD FOR ANALYZING CONCENTRATION DISTRIBUTION

PURPOSE: To correctly analyze not only the distribution of specific ions in the depthwise direction of sample substrates, but the concentration distribution in the horizontal direction to the substrates by sequentially calculating differences of results of mass analyses of sample substrates where du...

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1. Verfasser: TANIGAKI TAKESHIGE
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: To correctly analyze not only the distribution of specific ions in the depthwise direction of sample substrates, but the concentration distribution in the horizontal direction to the substrates by sequentially calculating differences of results of mass analyses of sample substrates where dummy films of different thicknesses are formed. CONSTITUTION: A dummy film, e.g. of silicon oxide is formed on each of (n+1) sample substrates. A resist mask 6 for the injection of ions is formed on the surface of the dummy film of each sample substrate under the same conditions as when an actual device is manufactured. Impurities are injected to each sample substrate under the same conditions by an ion injection method from a window 8 of the mask 6. Subsequently, the resist film 6 of each sample substrate is removed and then, the dummy film is removed. A buffer film is formed on the surface of each substrate. First-order ion beams are radiated from a plane E as a ground lateral end face of the prepared (n+1) pieces of sample substrates, thereby, to carry out SIMS depth profiling.