PHOTO-MASK
PURPOSE: To prevent an ill effect caused by the sticking of foreign matter and the like by forming a photo-mask itself with a nontranslucent material, using a translucent region formed on this material as a translucent region portion, and using the other region as a shielding region portion. CONSTIT...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SUGITANI SATOYUKI HAMAMOTO TATSUO KUJI TAKAAKI IZUMI AKIYA SHIMIZU HIROMASA KUBO AKIKO TSUBOKA TOMOAKI |
| description | PURPOSE: To prevent an ill effect caused by the sticking of foreign matter and the like by forming a photo-mask itself with a nontranslucent material, using a translucent region formed on this material as a translucent region portion, and using the other region as a shielding region portion. CONSTITUTION: A Si nitride film 10 is formed on the whole surface of a glass substrate SUB1 by the CVD method, for example, and a photo-resist is applied on the whole surface of the Si nitride film 10 to form a photo-resist film 20. The photo-resist film 20 is selectively exposed with a photo-mask 30. The photo- mask 30 itself is formed with a nontranslucent material such as stainless steel, a translucent region formed on this material is used as a translucent region portion 30a, and the other region is used as a shielding region portion 30b. No glass substrate exists in the translucent region portion 30a unlike in the past, i.e., a material allowing foreign matter to be stuck does not exist. Foreign matter and the like are prevented from sticking to the translucent area portion 30a. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH08146591A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH08146591A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH08146591A3</originalsourceid><addsrcrecordid>eNrjZOAK8PAP8df1dQz25mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgYWhiZmppaGjsbEqAEAYOocGg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTO-MASK</title><source>esp@cenet</source><creator>SUGITANI SATOYUKI ; HAMAMOTO TATSUO ; KUJI TAKAAKI ; IZUMI AKIYA ; SHIMIZU HIROMASA ; KUBO AKIKO ; TSUBOKA TOMOAKI</creator><creatorcontrib>SUGITANI SATOYUKI ; HAMAMOTO TATSUO ; KUJI TAKAAKI ; IZUMI AKIYA ; SHIMIZU HIROMASA ; KUBO AKIKO ; TSUBOKA TOMOAKI</creatorcontrib><description>PURPOSE: To prevent an ill effect caused by the sticking of foreign matter and the like by forming a photo-mask itself with a nontranslucent material, using a translucent region formed on this material as a translucent region portion, and using the other region as a shielding region portion. CONSTITUTION: A Si nitride film 10 is formed on the whole surface of a glass substrate SUB1 by the CVD method, for example, and a photo-resist is applied on the whole surface of the Si nitride film 10 to form a photo-resist film 20. The photo-resist film 20 is selectively exposed with a photo-mask 30. The photo- mask 30 itself is formed with a nontranslucent material such as stainless steel, a translucent region formed on this material is used as a translucent region portion 30a, and the other region is used as a shielding region portion 30b. No glass substrate exists in the translucent region portion 30a unlike in the past, i.e., a material allowing foreign matter to be stuck does not exist. Foreign matter and the like are prevented from sticking to the translucent area portion 30a.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960607&DB=EPODOC&CC=JP&NR=H08146591A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960607&DB=EPODOC&CC=JP&NR=H08146591A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUGITANI SATOYUKI</creatorcontrib><creatorcontrib>HAMAMOTO TATSUO</creatorcontrib><creatorcontrib>KUJI TAKAAKI</creatorcontrib><creatorcontrib>IZUMI AKIYA</creatorcontrib><creatorcontrib>SHIMIZU HIROMASA</creatorcontrib><creatorcontrib>KUBO AKIKO</creatorcontrib><creatorcontrib>TSUBOKA TOMOAKI</creatorcontrib><title>PHOTO-MASK</title><description>PURPOSE: To prevent an ill effect caused by the sticking of foreign matter and the like by forming a photo-mask itself with a nontranslucent material, using a translucent region formed on this material as a translucent region portion, and using the other region as a shielding region portion. CONSTITUTION: A Si nitride film 10 is formed on the whole surface of a glass substrate SUB1 by the CVD method, for example, and a photo-resist is applied on the whole surface of the Si nitride film 10 to form a photo-resist film 20. The photo-resist film 20 is selectively exposed with a photo-mask 30. The photo- mask 30 itself is formed with a nontranslucent material such as stainless steel, a translucent region formed on this material is used as a translucent region portion 30a, and the other region is used as a shielding region portion 30b. No glass substrate exists in the translucent region portion 30a unlike in the past, i.e., a material allowing foreign matter to be stuck does not exist. Foreign matter and the like are prevented from sticking to the translucent area portion 30a.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAK8PAP8df1dQz25mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgYWhiZmppaGjsbEqAEAYOocGg</recordid><startdate>19960607</startdate><enddate>19960607</enddate><creator>SUGITANI SATOYUKI</creator><creator>HAMAMOTO TATSUO</creator><creator>KUJI TAKAAKI</creator><creator>IZUMI AKIYA</creator><creator>SHIMIZU HIROMASA</creator><creator>KUBO AKIKO</creator><creator>TSUBOKA TOMOAKI</creator><scope>EVB</scope></search><sort><creationdate>19960607</creationdate><title>PHOTO-MASK</title><author>SUGITANI SATOYUKI ; HAMAMOTO TATSUO ; KUJI TAKAAKI ; IZUMI AKIYA ; SHIMIZU HIROMASA ; KUBO AKIKO ; TSUBOKA TOMOAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH08146591A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUGITANI SATOYUKI</creatorcontrib><creatorcontrib>HAMAMOTO TATSUO</creatorcontrib><creatorcontrib>KUJI TAKAAKI</creatorcontrib><creatorcontrib>IZUMI AKIYA</creatorcontrib><creatorcontrib>SHIMIZU HIROMASA</creatorcontrib><creatorcontrib>KUBO AKIKO</creatorcontrib><creatorcontrib>TSUBOKA TOMOAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUGITANI SATOYUKI</au><au>HAMAMOTO TATSUO</au><au>KUJI TAKAAKI</au><au>IZUMI AKIYA</au><au>SHIMIZU HIROMASA</au><au>KUBO AKIKO</au><au>TSUBOKA TOMOAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTO-MASK</title><date>1996-06-07</date><risdate>1996</risdate><abstract>PURPOSE: To prevent an ill effect caused by the sticking of foreign matter and the like by forming a photo-mask itself with a nontranslucent material, using a translucent region formed on this material as a translucent region portion, and using the other region as a shielding region portion. CONSTITUTION: A Si nitride film 10 is formed on the whole surface of a glass substrate SUB1 by the CVD method, for example, and a photo-resist is applied on the whole surface of the Si nitride film 10 to form a photo-resist film 20. The photo-resist film 20 is selectively exposed with a photo-mask 30. The photo- mask 30 itself is formed with a nontranslucent material such as stainless steel, a translucent region formed on this material is used as a translucent region portion 30a, and the other region is used as a shielding region portion 30b. No glass substrate exists in the translucent region portion 30a unlike in the past, i.e., a material allowing foreign matter to be stuck does not exist. Foreign matter and the like are prevented from sticking to the translucent area portion 30a.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH08146591A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | PHOTO-MASK |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T03%3A08%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SUGITANI%20SATOYUKI&rft.date=1996-06-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH08146591A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |