HEAT TREATMENT EQUIPMENT
PURPOSE: To improve uniformity of heating temperature in the surface of a semiconductor wafer, in a heat treatment equipment using radiation heat. CONSTITUTION: In an ashing equipment 1a of a semiconductor wafer 3 which uses lamps 5a, a partition board 8 on which surface a plurality of fine uneven p...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | PURPOSE: To improve uniformity of heating temperature in the surface of a semiconductor wafer, in a heat treatment equipment using radiation heat. CONSTITUTION: In an ashing equipment 1a of a semiconductor wafer 3 which uses lamps 5a, a partition board 8 on which surface a plurality of fine uneven parts are formed is interposed between the lamps 5a and the semiconductor wafer 3. The infrared rays radiated from the lamps 5a are scattered by the board 8, and the main surface of the semiconductor wafer 3 is uniformly irradiated with the infrared rays. |
|---|