PLASMA REACTION APPARATUS
PURPOSE: To provide a plasma reaction apparatus in which a uniform plasma of reactive gas is produced on the lower part of an electrode. CONSTITUTION: A reaction chamber 11, a reactive gas supply means which supply the reactive gas to the reaction chamber 11 and a gas exhausting means which exhausts...
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| creator | TAKEUCHI YOSHIAKI KOJO DAIICHI MURATA MASAYOSHI |
| description | PURPOSE: To provide a plasma reaction apparatus in which a uniform plasma of reactive gas is produced on the lower part of an electrode. CONSTITUTION: A reaction chamber 11, a reactive gas supply means which supply the reactive gas to the reaction chamber 11 and a gas exhausting means which exhausts the gas in the reaction chamber 11 are provided. Further, an electrode 12 composed of a plurality of loops arranged adjacent to each other in a flat plane is provided in the reaction chamber 11 and a high frequency power supply 14 connected to the electrode 12 and magnetic field generating coils 15a, 20a and 20b which generate a rotary magnetic field which moves in a direction parallel with the flat plane of the electrode 12 and rotates around the center axis of the plane are provided. |
| format | Patent |
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CONSTITUTION: A reaction chamber 11, a reactive gas supply means which supply the reactive gas to the reaction chamber 11 and a gas exhausting means which exhausts the gas in the reaction chamber 11 are provided. Further, an electrode 12 composed of a plurality of loops arranged adjacent to each other in a flat plane is provided in the reaction chamber 11 and a high frequency power supply 14 connected to the electrode 12 and magnetic field generating coils 15a, 20a and 20b which generate a rotary magnetic field which moves in a direction parallel with the flat plane of the electrode 12 and rotates around the center axis of the plane are provided.</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR RELEVANT APPARATUS ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960423&DB=EPODOC&CC=JP&NR=H08107075A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960423&DB=EPODOC&CC=JP&NR=H08107075A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEUCHI YOSHIAKI</creatorcontrib><creatorcontrib>KOJO DAIICHI</creatorcontrib><creatorcontrib>MURATA MASAYOSHI</creatorcontrib><title>PLASMA REACTION APPARATUS</title><description>PURPOSE: To provide a plasma reaction apparatus in which a uniform plasma of reactive gas is produced on the lower part of an electrode. CONSTITUTION: A reaction chamber 11, a reactive gas supply means which supply the reactive gas to the reaction chamber 11 and a gas exhausting means which exhausts the gas in the reaction chamber 11 are provided. Further, an electrode 12 composed of a plurality of loops arranged adjacent to each other in a flat plane is provided in the reaction chamber 11 and a high frequency power supply 14 connected to the electrode 12 and magnetic field generating coils 15a, 20a and 20b which generate a rotary magnetic field which moves in a direction parallel with the flat plane of the electrode 12 and rotates around the center axis of the plane are provided.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR RELEVANT APPARATUS</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAM8HEM9nVUCHJ1dA7x9PdTcAwIcAxyDAkN5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BHgYWhgbmBuamjsbEqAEAHLIgPg</recordid><startdate>19960423</startdate><enddate>19960423</enddate><creator>TAKEUCHI YOSHIAKI</creator><creator>KOJO DAIICHI</creator><creator>MURATA MASAYOSHI</creator><scope>EVB</scope></search><sort><creationdate>19960423</creationdate><title>PLASMA REACTION APPARATUS</title><author>TAKEUCHI YOSHIAKI ; KOJO DAIICHI ; MURATA MASAYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH08107075A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR RELEVANT APPARATUS</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKEUCHI YOSHIAKI</creatorcontrib><creatorcontrib>KOJO DAIICHI</creatorcontrib><creatorcontrib>MURATA MASAYOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKEUCHI YOSHIAKI</au><au>KOJO DAIICHI</au><au>MURATA MASAYOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA REACTION APPARATUS</title><date>1996-04-23</date><risdate>1996</risdate><abstract>PURPOSE: To provide a plasma reaction apparatus in which a uniform plasma of reactive gas is produced on the lower part of an electrode. CONSTITUTION: A reaction chamber 11, a reactive gas supply means which supply the reactive gas to the reaction chamber 11 and a gas exhausting means which exhausts the gas in the reaction chamber 11 are provided. Further, an electrode 12 composed of a plurality of loops arranged adjacent to each other in a flat plane is provided in the reaction chamber 11 and a high frequency power supply 14 connected to the electrode 12 and magnetic field generating coils 15a, 20a and 20b which generate a rotary magnetic field which moves in a direction parallel with the flat plane of the electrode 12 and rotates around the center axis of the plane are provided.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PLASMA REACTION APPARATUS |
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