MANUFACTURE OF II-VI GROUP SEMICONDUCTOR ELEMENT

PURPOSE:To satisfactorily reduce ohmic-contact of an electrode when a ZnTe layer is used as an electrode contact layer. CONSTITUTION:Relating to manufacture of II-VI group semiconductor element wherein a 11-VI group semiconductor layer and, over it, an electrode contact layer are epitaxial-grown, by...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATSUMOTO OSAMU, HIEI FUTOSHI, IKEDA MASAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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