SEMICONDUCTOR MANUFACTURING EQUIPMENT
PURPOSE:To form a polycrystal film (e.g. a polycrystalline silicon film) provided with sufficiently large crystal grain diameter which can obtain high film formation speed when an amorphous film (e.g. amorphous silicon film) is formed at a low temperature. CONSTITUTION:In a reaction chamber 3 of a s...
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| Zusammenfassung: | PURPOSE:To form a polycrystal film (e.g. a polycrystalline silicon film) provided with sufficiently large crystal grain diameter which can obtain high film formation speed when an amorphous film (e.g. amorphous silicon film) is formed at a low temperature. CONSTITUTION:In a reaction chamber 3 of a semiconductor manufacturing equipment for forming a desired film, a plurality of light sources 12 and 13 which apply light different in wavelenth in the range of wavelength shorter than that of visible light to the surface of a wafer 1, and a heater 1 for heating the wafer 1 are installed. |
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