FORMATION METHOD OF VIA HOLE AND MANUFACTURE OF MULTILAYER WIRING BOARD AS WELL AS MULTILAYER WIRING BOARD AND ELECTRONIC APPARATUS

PURPOSE:To reduce the interlayer connection resistance of a wiring layer formed on a resin thin-film multilayer wiring board by a method wherein, by utilizing the laser etching threshold value of a metal forming a barrier layer and of a metal forming the wiring layer, the barrier layer formed betwee...

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Hauptverfasser: SHIMIZU KANAE, TSUKAHIRO KOUJI
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creator SHIMIZU KANAE
TSUKAHIRO KOUJI
description PURPOSE:To reduce the interlayer connection resistance of a wiring layer formed on a resin thin-film multilayer wiring board by a method wherein, by utilizing the laser etching threshold value of a metal forming a barrier layer and of a metal forming the wiring layer, the barrier layer formed between a resin thin film and the wiring layer is removed simultaneously. CONSTITUTION:A sample 5 in which a copper film 2 and a chromium film 3 have been laminated and formed sequentially on a glass substrate 1 by using a sputtering method and in which a polyimide film 4 has been formed on them is placed on an X-Y stage for a laser irradiation apparatus. A mask 7 in which light-transmitting regions 9 have been formed is placed on the sample 5, a laser at an energy intensity of 0.5 to 0.55J/cm .pulse is irradiated from a laser oscillator 8 by utilizing the difference in a laser etching threshold value between chromium anal copper. As a result, the chromium film 3 inside the via holes 9 can be removed completely without damaging the copper wiring layer 2. Consequently, an upper wiring layer and a lower wiring layer in the via holes are connected directly, and their interlayer connection resistance is reduced.
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CONSTITUTION:A sample 5 in which a copper film 2 and a chromium film 3 have been laminated and formed sequentially on a glass substrate 1 by using a sputtering method and in which a polyimide film 4 has been formed on them is placed on an X-Y stage for a laser irradiation apparatus. A mask 7 in which light-transmitting regions 9 have been formed is placed on the sample 5, a laser at an energy intensity of 0.5 to 0.55J/cm .pulse is irradiated from a laser oscillator 8 by utilizing the difference in a laser etching threshold value between chromium anal copper. As a result, the chromium film 3 inside the via holes 9 can be removed completely without damaging the copper wiring layer 2. 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subjects BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MACHINE TOOLS
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
title FORMATION METHOD OF VIA HOLE AND MANUFACTURE OF MULTILAYER WIRING BOARD AS WELL AS MULTILAYER WIRING BOARD AND ELECTRONIC APPARATUS
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