MANUFACTURE OF THIN FILM TRANSISTOR

PURPOSE: To form a good polycrystalline Si film on a substrate by creating crystal nuclei in an amorphous Si film on the substrate at specified high temp. or more and separating a step of growing crystal grains at a specified low temp. or less to crystallize it. CONSTITUTION: On a wafer 31 having a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MINAMI MOTOMORI, HAKU TANEYASU, SOU JIYUNKOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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