SEMICONDUCTOR DEVICE

PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NONOYAMA SHIGEHARU, YAMAMOTO KOJI
Format: Patent
Sprache:eng
Schlagworte:
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