SEMICONDUCTOR DEVICE
PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate...
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| creator | NONOYAMA SHIGEHARU YAMAMOTO KOJI |
| description | PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate 1 having pn junction and a cathode side main electrode 6 is provided therein. The thickness of the electrode is set thinner than the depth of the groove. Consequently, the fused metal of the electrode does not flow easily onto the end face when it is subjected to etching. Since the end face is protected against contamination, the withstand voltage yield is enhanced. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH07335913A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH07335913A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH07335913A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4G5sbGppaGxo7GxKgBAIhCHuo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>NONOYAMA SHIGEHARU ; YAMAMOTO KOJI</creator><creatorcontrib>NONOYAMA SHIGEHARU ; YAMAMOTO KOJI</creatorcontrib><description>PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate 1 having pn junction and a cathode side main electrode 6 is provided therein. The thickness of the electrode is set thinner than the depth of the groove. Consequently, the fused metal of the electrode does not flow easily onto the end face when it is subjected to etching. Since the end face is protected against contamination, the withstand voltage yield is enhanced.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951222&DB=EPODOC&CC=JP&NR=H07335913A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951222&DB=EPODOC&CC=JP&NR=H07335913A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NONOYAMA SHIGEHARU</creatorcontrib><creatorcontrib>YAMAMOTO KOJI</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate 1 having pn junction and a cathode side main electrode 6 is provided therein. The thickness of the electrode is set thinner than the depth of the groove. Consequently, the fused metal of the electrode does not flow easily onto the end face when it is subjected to etching. Since the end face is protected against contamination, the withstand voltage yield is enhanced.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAR4G5sbGppaGxo7GxKgBAIhCHuo</recordid><startdate>19951222</startdate><enddate>19951222</enddate><creator>NONOYAMA SHIGEHARU</creator><creator>YAMAMOTO KOJI</creator><scope>EVB</scope></search><sort><creationdate>19951222</creationdate><title>SEMICONDUCTOR DEVICE</title><author>NONOYAMA SHIGEHARU ; YAMAMOTO KOJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH07335913A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NONOYAMA SHIGEHARU</creatorcontrib><creatorcontrib>YAMAMOTO KOJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NONOYAMA SHIGEHARU</au><au>YAMAMOTO KOJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>1995-12-22</date><risdate>1995</risdate><abstract>PURPOSE:To enhance the withstand voltage yield of a power semiconductor element by protecting the end face thereof against contamination due to fusion of an electrode when the end face is subjected to chemical etching. CONSTITUTION:A groove 5 is made in the major surface of a semiconductor substrate 1 having pn junction and a cathode side main electrode 6 is provided therein. The thickness of the electrode is set thinner than the depth of the groove. Consequently, the fused metal of the electrode does not flow easily onto the end face when it is subjected to etching. Since the end face is protected against contamination, the withstand voltage yield is enhanced.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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