MOS TRANSISTOR

PURPOSE:To provide a MOS transistor which enables a threshold voltage to be controlled according to changes in a flat band voltage, by distributing specified metal elements ideally in an oxide film. CONSTITUTION:Chromium in concentration of over 1X10 /cm is contained only in an interface between a s...

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1. Verfasser:	TAKIYAMA MASANORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	TAKIYAMA MASANORI
description	PURPOSE:To provide a MOS transistor which enables a threshold voltage to be controlled according to changes in a flat band voltage, by distributing specified metal elements ideally in an oxide film. CONSTITUTION:Chromium in concentration of over 1X10 /cm is contained only in an interface between a silicon oxide film 4 and its upper electrode 5 and in a silicon oxide film 4 in the vicinity of the interface, a region 6 containing chromium in that concentration has the silicon oxide film 4, thickness of which is under 75%, the concentration of impurities supplying holds or electrons into the upper electrode 5 is controlled under 1X10 /cm , and the concentration of impurities supplying holes or electrons into a silicon substrate 1 is controlled under 1X10 /cm . Consequently, a threshold voltage can be controlled according to changes in a flat band voltage with hardly deteriorating insulation of the silicon oxide film and having almost no adverse effects on electrical characteristics in the silicon substrate.
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CONSTITUTION:Chromium in concentration of over 1X10 /cm is contained only in an interface between a silicon oxide film 4 and its upper electrode 5 and in a silicon oxide film 4 in the vicinity of the interface, a region 6 containing chromium in that concentration has the silicon oxide film 4, thickness of which is under 75%, the concentration of impurities supplying holds or electrons into the upper electrode 5 is controlled under 1X10 /cm , and the concentration of impurities supplying holes or electrons into a silicon substrate 1 is controlled under 1X10 /cm . Consequently, a threshold voltage can be controlled according to changes in a flat band voltage with hardly deteriorating insulation of the silicon oxide film and having almost no adverse effects on electrical characteristics in the silicon substrate.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950131&DB=EPODOC&CC=JP&NR=H0730106A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950131&DB=EPODOC&CC=JP&NR=H0730106A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKIYAMA MASANORI</creatorcontrib><title>MOS TRANSISTOR</title><description>PURPOSE:To provide a MOS transistor which enables a threshold voltage to be controlled according to changes in a flat band voltage, by distributing specified metal elements ideally in an oxide film. 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Consequently, a threshold voltage can be controlled according to changes in a flat band voltage with hardly deteriorating insulation of the silicon oxide film and having almost no adverse effects on electrical characteristics in the silicon substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZODz9Q9WCAly9Av2DA7xD-JhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4G5sYGhgZmjsZEKAEApuIc3w</recordid><startdate>19950131</startdate><enddate>19950131</enddate><creator>TAKIYAMA MASANORI</creator><scope>EVB</scope></search><sort><creationdate>19950131</creationdate><title>MOS TRANSISTOR</title><author>TAKIYAMA MASANORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0730106A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKIYAMA MASANORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKIYAMA MASANORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MOS TRANSISTOR</title><date>1995-01-31</date><risdate>1995</risdate><abstract>PURPOSE:To provide a MOS transistor which enables a threshold voltage to be controlled according to changes in a flat band voltage, by distributing specified metal elements ideally in an oxide film. CONSTITUTION:Chromium in concentration of over 1X10 /cm is contained only in an interface between a silicon oxide film 4 and its upper electrode 5 and in a silicon oxide film 4 in the vicinity of the interface, a region 6 containing chromium in that concentration has the silicon oxide film 4, thickness of which is under 75%, the concentration of impurities supplying holds or electrons into the upper electrode 5 is controlled under 1X10 /cm , and the concentration of impurities supplying holes or electrons into a silicon substrate 1 is controlled under 1X10 /cm . Consequently, a threshold voltage can be controlled according to changes in a flat band voltage with hardly deteriorating insulation of the silicon oxide film and having almost no adverse effects on electrical characteristics in the silicon substrate.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	MOS TRANSISTOR
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