GROWTH OF II-VI COMPOUND SEMICONDUCTOR
PURPOSE:To allow growth of a p-type II-VI compound having sufficiently high carrier concentration or a II-VI compound semiconductor having low defect density and excellent crystallization. CONSTITUTION:At the time of vapor growth of a p-type II-VI compound semiconductor on a semiconductor substrate...
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| creator | MATSUMOTO OSAMU ISHIBASHI AKIRA HIEI FUTOSHI ITO SATORU SHIRAISHI SEIJI MINATOYA RIKAKO |
| description | PURPOSE:To allow growth of a p-type II-VI compound having sufficiently high carrier concentration or a II-VI compound semiconductor having low defect density and excellent crystallization. CONSTITUTION:At the time of vapor growth of a p-type II-VI compound semiconductor on a semiconductor substrate such as a GaAs substrate by a molecular beam epitaxial method, a semiconductor substrate 1 having a main surface being off by a small angle from a (100) surface in the direction by a small angle, and a main surface being off in the (011) direction by a small angle or a main surface being off in the (01-1) direction by a small angle further a main surface being off in the (011) direction by a small angle is used. In order to make a II-VI compound semiconductor of low defect density to grow, especially the semiconductor substrate 1 having a main surface being off from the (100) in the (01-1) direction by a small angle is used. |
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CONSTITUTION:At the time of vapor growth of a p-type II-VI compound semiconductor on a semiconductor substrate such as a GaAs substrate by a molecular beam epitaxial method, a semiconductor substrate 1 having a main surface being off by a small angle from a (100) surface in the direction by a small angle, and a main surface being off in the (011) direction by a small angle or a main surface being off in the (01-1) direction by a small angle further a main surface being off in the (011) direction by a small angle is used. In order to make a II-VI compound semiconductor of low defect density to grow, especially the semiconductor substrate 1 having a main surface being off from the (100) in the (01-1) direction by a small angle is used.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | GROWTH OF II-VI COMPOUND SEMICONDUCTOR |
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