MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE: To resolve a problem, such as a wiring short circuit by thermally treating and removing a by-product generated at a dry type etching stage at a temperature higher than the boiling point of the by-product. CONSTITUTION: A gate oxide film 31, a polysilicon layer 32, a WSi2 layer 33, a first H...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	RI RAIIN, KIN EIIKU, BOKU BUNKAN, GO KANEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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