LIGHT-EMITTING DEVICE
PURPOSE:To provide a light-emitting device constituted by using silicon as the substrate, particularly a light-emitting device fabricated using porous silicon as the substrate. CONSTITUTION:The surface of a single crystal silicon substrate 10 is turned porous through anodizing at a current density o...
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creator | MATSUMOTO TAKAHIRO MIMURA SHUSUKE |
description | PURPOSE:To provide a light-emitting device constituted by using silicon as the substrate, particularly a light-emitting device fabricated using porous silicon as the substrate. CONSTITUTION:The surface of a single crystal silicon substrate 10 is turned porous through anodizing at a current density of 5-50mA/cm in a hydrofluoric acid solution, and the current density is increased to 600mA/cm or more and electrolytic polishing is conducted, thus removing the porous portion from the silicon substrate. After the removal, muc-SiC 30 is deposited on the surface of the single crystal silicon substrate, and a P-N junction is formed between muc-SiC 30 and the single crystal silicon substrate. Silicon crystal particles 24 produced when the porous portion is formed are left on the surface of the single crystal silicon substrate after the porous portion is removed, and the silicon crystal particles 24 are used as the luminescent center of EL emission. |
format | Patent |
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CONSTITUTION:The surface of a single crystal silicon substrate 10 is turned porous through anodizing at a current density of 5-50mA/cm in a hydrofluoric acid solution, and the current density is increased to 600mA/cm or more and electrolytic polishing is conducted, thus removing the porous portion from the silicon substrate. After the removal, muc-SiC 30 is deposited on the surface of the single crystal silicon substrate, and a P-N junction is formed between muc-SiC 30 and the single crystal silicon substrate. Silicon crystal particles 24 produced when the porous portion is formed are left on the surface of the single crystal silicon substrate after the porous portion is removed, and the silicon crystal particles 24 are used as the luminescent center of EL emission.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950905&DB=EPODOC&CC=JP&NR=H07235691A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950905&DB=EPODOC&CC=JP&NR=H07235691A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUMOTO TAKAHIRO</creatorcontrib><creatorcontrib>MIMURA SHUSUKE</creatorcontrib><title>LIGHT-EMITTING DEVICE</title><description>PURPOSE:To provide a light-emitting device constituted by using silicon as the substrate, particularly a light-emitting device fabricated using porous silicon as the substrate. 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Silicon crystal particles 24 produced when the porous portion is formed are left on the surface of the single crystal silicon substrate after the porous portion is removed, and the silicon crystal particles 24 are used as the luminescent center of EL emission.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD18XT3CNF19fUMCfH0c1dwcQ3zdHblYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxXgEeBuZGxqZmloaOxsSoAQCanB8W</recordid><startdate>19950905</startdate><enddate>19950905</enddate><creator>MATSUMOTO TAKAHIRO</creator><creator>MIMURA SHUSUKE</creator><scope>EVB</scope></search><sort><creationdate>19950905</creationdate><title>LIGHT-EMITTING DEVICE</title><author>MATSUMOTO TAKAHIRO ; MIMURA SHUSUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH07235691A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUMOTO TAKAHIRO</creatorcontrib><creatorcontrib>MIMURA SHUSUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUMOTO TAKAHIRO</au><au>MIMURA SHUSUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT-EMITTING DEVICE</title><date>1995-09-05</date><risdate>1995</risdate><abstract>PURPOSE:To provide a light-emitting device constituted by using silicon as the substrate, particularly a light-emitting device fabricated using porous silicon as the substrate. CONSTITUTION:The surface of a single crystal silicon substrate 10 is turned porous through anodizing at a current density of 5-50mA/cm in a hydrofluoric acid solution, and the current density is increased to 600mA/cm or more and electrolytic polishing is conducted, thus removing the porous portion from the silicon substrate. After the removal, muc-SiC 30 is deposited on the surface of the single crystal silicon substrate, and a P-N junction is formed between muc-SiC 30 and the single crystal silicon substrate. Silicon crystal particles 24 produced when the porous portion is formed are left on the surface of the single crystal silicon substrate after the porous portion is removed, and the silicon crystal particles 24 are used as the luminescent center of EL emission.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | LIGHT-EMITTING DEVICE |
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