FIELD OXIDE FILM FORMATION OF SEMICONDUCTOR ELEMENT

PURPOSE: To provide a formation method for field oxide film in a semiconductor device which minimizes the generation of bird's beak by using a triple buffer (nitriding film/nitride film). CONSTITUTION: A pat oxide film 2 and a first buffer nitriding film 3 are formed one after another on a sili...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAKU DOUGEN, RI EITETSU, BOKU SOUKOU, HAKU KENTETSU, KIN SOUEKI, RIKU KEIZEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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