FORMATION OF METALLIC PATTERN FILM

PURPOSE:To make it possible to subject a semiconductor integrated device to novel wiring by electroplating a metallic film onto a metallic pattern film formed by irradiating a point to be formed with the novel pattern on a sample with a convergent ion beam and spraying a metallic org. compd. thereto. CONSTITUTION:A prescribed insulating film removing region 21 is set in the prescribed position on two wirings 20 to be electrically connected and a region 22 to be formed with the novel wiring is set. While this insulating film removing region 21 is repetitively scanned, the region is irradiated with the convergent ion beam and the insulating film is completely removed. While the novel wiring region 22 is then repetitively scanned, the region is irradiated with the convergent ion beam and simultaneously, the vapor of molybdenum hexacarbonyl is blown to the novel wiring region 22, a pattern film of Mo is formed in the novel wiring region 22. Further, a drawing brush 23 impregnated with a gold plating liquid is brought into contact with the novel wiring region 22 and a voltage is impressed thereto, by which electroplating is executed and the gold plating is applied on the thin film of the Mo. As a result, the wiring of a high- speed integrated circuit and circuit to be passed with large current is thereby changed.