GATE DEMARCATION TRANSISTOR

PURPOSE: To provide the transistor having the gate structure, wherein the dimensions of a channel are not affected by the intruding degree of a field oxide into the channel region of a bird's beak structure. CONSTITUTION: A gate conductor 42 covers a gate oxide layer 70 at the central part and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SHIBARINGU ESU MAHANTO SHIETSUTEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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