FORMATION OF SILICON NITRIDE FILM
PURPOSE:To inhibit the generation and abnormal growth of a spontaneously oxidized film on a substrate in a subsequent process in a furnace by introducing oxygen into the furnace, oxidizing residue, evacuating the furnace and then carrying the substrate into the furnace. CONSTITUTION:A substrate put...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ASARI SHIN NAKAMURA KYUZO TAKAHASHI SEIICHI MIHASHI TETSUO OTA YOSHIFUMI |
| description | PURPOSE:To inhibit the generation and abnormal growth of a spontaneously oxidized film on a substrate in a subsequent process in a furnace by introducing oxygen into the furnace, oxidizing residue, evacuating the furnace and then carrying the substrate into the furnace. CONSTITUTION:A substrate put on a quartz boat is carried into a pre-evacuated chamber and put on a transfer stand. Gaseous oxygen diluted with gaseous Ar is introduced into a furnace until atmospheric pressure is attained and a reactive gas and a reactional product remaining in the furnace after a preceding process are made stable by oxidation. The furnace is then evacuated and the substrate is carried into the furnace by moving the transfer stand forward from the pre-evacuated chamber. The furnace is evacuated again, a reactive gas is introduced and a silicon nitride film is grown on the substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH07109574A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH07109574A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH07109574A3</originalsourceid><addsrcrecordid>eNrjZFB08w_ydQzx9PdT8HdTCPb08XQGMv08Q4I8XVwV3Dx9fHkYWNMSc4pTeaE0N1CPa4izh25qQX58anFBYnJqXmpJvFeAh4G5oYGlqbmJozExagAXESJY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FORMATION OF SILICON NITRIDE FILM</title><source>esp@cenet</source><creator>ASARI SHIN ; NAKAMURA KYUZO ; TAKAHASHI SEIICHI ; MIHASHI TETSUO ; OTA YOSHIFUMI</creator><creatorcontrib>ASARI SHIN ; NAKAMURA KYUZO ; TAKAHASHI SEIICHI ; MIHASHI TETSUO ; OTA YOSHIFUMI</creatorcontrib><description>PURPOSE:To inhibit the generation and abnormal growth of a spontaneously oxidized film on a substrate in a subsequent process in a furnace by introducing oxygen into the furnace, oxidizing residue, evacuating the furnace and then carrying the substrate into the furnace. CONSTITUTION:A substrate put on a quartz boat is carried into a pre-evacuated chamber and put on a transfer stand. Gaseous oxygen diluted with gaseous Ar is introduced into a furnace until atmospheric pressure is attained and a reactive gas and a reactional product remaining in the furnace after a preceding process are made stable by oxidation. The furnace is then evacuated and the substrate is carried into the furnace by moving the transfer stand forward from the pre-evacuated chamber. The furnace is evacuated again, a reactive gas is introduced and a silicon nitride film is grown on the substrate.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950425&DB=EPODOC&CC=JP&NR=H07109574A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950425&DB=EPODOC&CC=JP&NR=H07109574A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASARI SHIN</creatorcontrib><creatorcontrib>NAKAMURA KYUZO</creatorcontrib><creatorcontrib>TAKAHASHI SEIICHI</creatorcontrib><creatorcontrib>MIHASHI TETSUO</creatorcontrib><creatorcontrib>OTA YOSHIFUMI</creatorcontrib><title>FORMATION OF SILICON NITRIDE FILM</title><description>PURPOSE:To inhibit the generation and abnormal growth of a spontaneously oxidized film on a substrate in a subsequent process in a furnace by introducing oxygen into the furnace, oxidizing residue, evacuating the furnace and then carrying the substrate into the furnace. CONSTITUTION:A substrate put on a quartz boat is carried into a pre-evacuated chamber and put on a transfer stand. Gaseous oxygen diluted with gaseous Ar is introduced into a furnace until atmospheric pressure is attained and a reactive gas and a reactional product remaining in the furnace after a preceding process are made stable by oxidation. The furnace is then evacuated and the substrate is carried into the furnace by moving the transfer stand forward from the pre-evacuated chamber. The furnace is evacuated again, a reactive gas is introduced and a silicon nitride film is grown on the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB08w_ydQzx9PdT8HdTCPb08XQGMv08Q4I8XVwV3Dx9fHkYWNMSc4pTeaE0N1CPa4izh25qQX58anFBYnJqXmpJvFeAh4G5oYGlqbmJozExagAXESJY</recordid><startdate>19950425</startdate><enddate>19950425</enddate><creator>ASARI SHIN</creator><creator>NAKAMURA KYUZO</creator><creator>TAKAHASHI SEIICHI</creator><creator>MIHASHI TETSUO</creator><creator>OTA YOSHIFUMI</creator><scope>EVB</scope></search><sort><creationdate>19950425</creationdate><title>FORMATION OF SILICON NITRIDE FILM</title><author>ASARI SHIN ; NAKAMURA KYUZO ; TAKAHASHI SEIICHI ; MIHASHI TETSUO ; OTA YOSHIFUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH07109574A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ASARI SHIN</creatorcontrib><creatorcontrib>NAKAMURA KYUZO</creatorcontrib><creatorcontrib>TAKAHASHI SEIICHI</creatorcontrib><creatorcontrib>MIHASHI TETSUO</creatorcontrib><creatorcontrib>OTA YOSHIFUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASARI SHIN</au><au>NAKAMURA KYUZO</au><au>TAKAHASHI SEIICHI</au><au>MIHASHI TETSUO</au><au>OTA YOSHIFUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMATION OF SILICON NITRIDE FILM</title><date>1995-04-25</date><risdate>1995</risdate><abstract>PURPOSE:To inhibit the generation and abnormal growth of a spontaneously oxidized film on a substrate in a subsequent process in a furnace by introducing oxygen into the furnace, oxidizing residue, evacuating the furnace and then carrying the substrate into the furnace. CONSTITUTION:A substrate put on a quartz boat is carried into a pre-evacuated chamber and put on a transfer stand. Gaseous oxygen diluted with gaseous Ar is introduced into a furnace until atmospheric pressure is attained and a reactive gas and a reactional product remaining in the furnace after a preceding process are made stable by oxidation. The furnace is then evacuated and the substrate is carried into the furnace by moving the transfer stand forward from the pre-evacuated chamber. The furnace is evacuated again, a reactive gas is introduced and a silicon nitride film is grown on the substrate.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH07109574A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FORMATION OF SILICON NITRIDE FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T15%3A36%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ASARI%20SHIN&rft.date=1995-04-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH07109574A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |