FIELD EFFECT TRANSISTOR

PURPOSE:To reduce the drain current, increase the input capacitance, and reduce the power consumption of a MESFET by forming a region of a conductivity type opposite to that of the source, drain and channel regions and electrically connecting the region of the opposite conductivity type with the gate electrode. CONSTITUTION:A region 9 of p-type, opposite to that of a source electrode 5 and gate electrode 7, is formed, by Mg ion implantation, in the source region 2 in an n-type high concentration extrinsic semiconductor layer between the electrodes; the region 9 of the opposite conductivity type is electrically connected with the gate electrode 7 through a connection 10 projected therefrom. As mentioned above, a p-n diode is added to a gate electrode 7 by forming a p-type region 9 in an n-type source region 2 to constitute the p-n type diode and electrically connecting the region 9 of the opposite conductivity type with the gate electrode 7.