MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE: To provide a highly integrated semiconductor device by minimizing the side diffusion of a field oxide. CONSTITUTION: After the successive formation of a pad oxide film 32 and a nitride film on the whole surface of a semiconductor substrate 30, an aperture part 37 is formed to form an elemen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BOKU TOUKEN, KIN YOSHITOSHI, RI YOUKIYUU, HAYASHI HEIGAKU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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