ELECTRICALLY REWRITABLE NON-VOLATILE MEMORY

PURPOSE:To reduce the memory capacity of an EEPROM including data high rewriting frequency as an extremely small part of writing data. CONSTITUTION:An address detecting circuit 12 detects whether a specified writing address is an address in a prescribed range or not, and when the address is included in the prescribed range as a detected result, judges that data to be written have high rewriting frequency. The same three pairs of data D7 to D10 are prepared by a data preparing circuit 11 and overlappedly written in three memory cells A0, A0', A0''. At the time of reading, data are respectively read out from respective memory cells A0, A0', A0'' and data determined by majority through a majority logic circuit 15 are outputted as reading data.