THIN-FILM TRANSISTOR AND ITS MANUFACTURE

PURPOSE: To increase a channel length by forming a thin film transistor channel to bend along a trench surface. CONSTITUTION: A trench 11 is formed in a first insulation film 1 and a silicon nitride film 2 is deposited in a surface of the first insulation film 1. After a second insulation film 3 is...

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Bibliographische Detailangaben

1. Verfasser:	KAWA KEISAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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