MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To flatten a film at low temperature without lowering the quality of the film by stacking a BPSG film or a PSG film high in the concentration of impurity on an uneven substrate, and then, stacking an SiO2 film, or a BPSG film or a PSG film low in concentration of impurity, and further, heat-...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHIMOTO HIROKO, MAEDA KAZUO, MATSUI FUMIYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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