JPH0622272B

PURPOSE:To reduce contamination and damage of a gate oxide film and to prevent variation in threshold voltage by covering an oxide film with a polycrystalline silicon layer which does not contain impurity successively after formation of the gate oxide film of a MOSFET. CONSTITUTION:After phosphorus...

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Hauptverfasser:	YAMAKI BUNSHIRO, ITO TAKAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	YAMAKI BUNSHIRO ITO TAKAHIRO
description	PURPOSE:To reduce contamination and damage of a gate oxide film and to prevent variation in threshold voltage by covering an oxide film with a polycrystalline silicon layer which does not contain impurity successively after formation of the gate oxide film of a MOSFET. CONSTITUTION:After phosphorus is ion-implanted to a p-type silicon substrate 1, heat diffusion is applied to form a collector N-region 11, a collector N-region 12 and a cathode N-region 2 of a diode. Patterning is applied while forming an oxide film again. After boron is ion-implanted, heat diffusion is applied to form inactive base P-regions 14, 17 and P-region 5 consisting of anode P-regions 3, 4 of a protective diode and a lower electrode of a capacitor, and active base P-regions 13, 16 are formed by ion-implantation. Then after a gate oxide film 9 of a MOSFET is formed, a polycrystalline layer 50 which does not contain impurity is coated successively without applying a process such as acid treatment. Contamination and damage of a gate oxide film can be prevented in this way.
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CONSTITUTION:After phosphorus is ion-implanted to a p-type silicon substrate 1, heat diffusion is applied to form a collector N-region 11, a collector N-region 12 and a cathode N-region 2 of a diode. Patterning is applied while forming an oxide film again. After boron is ion-implanted, heat diffusion is applied to form inactive base P<+>-regions 14, 17 and P<+>-region 5 consisting of anode P<+>-regions 3, 4 of a protective diode and a lower electrode of a capacitor, and active base P-regions 13, 16 are formed by ion-implantation. Then after a gate oxide film 9 of a MOSFET is formed, a polycrystalline layer 50 which does not contain impurity is coated successively without applying a process such as acid treatment. Contamination and damage of a gate oxide film can be prevented in this way.</description><edition>5</edition><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940323&DB=EPODOC&CC=JP&NR=H0622272B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940323&DB=EPODOC&CC=JP&NR=H0622272B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMAKI BUNSHIRO</creatorcontrib><creatorcontrib>ITO TAKAHIRO</creatorcontrib><title>JPH0622272B</title><description>PURPOSE:To reduce contamination and damage of a gate oxide film and to prevent variation in threshold voltage by covering an oxide film with a polycrystalline silicon layer which does not contain impurity successively after formation of the gate oxide film of a MOSFET. CONSTITUTION:After phosphorus is ion-implanted to a p-type silicon substrate 1, heat diffusion is applied to form a collector N-region 11, a collector N-region 12 and a cathode N-region 2 of a diode. Patterning is applied while forming an oxide film again. After boron is ion-implanted, heat diffusion is applied to form inactive base P<+>-regions 14, 17 and P<+>-region 5 consisting of anode P<+>-regions 3, 4 of a protective diode and a lower electrode of a capacitor, and active base P-regions 13, 16 are formed by ion-implantation. Then after a gate oxide film 9 of a MOSFET is formed, a polycrystalline layer 50 which does not contain impurity is coated successively without applying a process such as acid treatment. Contamination and damage of a gate oxide film can be prevented in this way.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2CvAwMDMyMjI3cuJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBAB4UBwz</recordid><startdate>19940323</startdate><enddate>19940323</enddate><creator>YAMAKI BUNSHIRO</creator><creator>ITO TAKAHIRO</creator><scope>EVB</scope></search><sort><creationdate>19940323</creationdate><title>JPH0622272B</title><author>YAMAKI BUNSHIRO ; ITO TAKAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0622272BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1994</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMAKI BUNSHIRO</creatorcontrib><creatorcontrib>ITO TAKAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMAKI BUNSHIRO</au><au>ITO TAKAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPH0622272B</title><date>1994-03-23</date><risdate>1994</risdate><abstract>PURPOSE:To reduce contamination and damage of a gate oxide film and to prevent variation in threshold voltage by covering an oxide film with a polycrystalline silicon layer which does not contain impurity successively after formation of the gate oxide film of a MOSFET. CONSTITUTION:After phosphorus is ion-implanted to a p-type silicon substrate 1, heat diffusion is applied to form a collector N-region 11, a collector N-region 12 and a cathode N-region 2 of a diode. Patterning is applied while forming an oxide film again. After boron is ion-implanted, heat diffusion is applied to form inactive base P<+>-regions 14, 17 and P<+>-region 5 consisting of anode P<+>-regions 3, 4 of a protective diode and a lower electrode of a capacitor, and active base P-regions 13, 16 are formed by ion-implantation. Then after a gate oxide film 9 of a MOSFET is formed, a polycrystalline layer 50 which does not contain impurity is coated successively without applying a process such as acid treatment. Contamination and damage of a gate oxide film can be prevented in this way.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record>
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subjects	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	JPH0622272B
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