JPH0576172B
In a apparatus for glow discharge deposition process gases are commonly introduced into a deposition chamber (29) from a gas manifold (36) disposed on the upstream side of a substrate (11). As the process gases are drawn across the surface of the substrate, they are continuously disassociated and re...
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| creator | MASATSUGU IZU PUREEMU NASU |
| description | In a apparatus for glow discharge deposition process gases are commonly introduced into a deposition chamber (29) from a gas manifold (36) disposed on the upstream side of a substrate (11). As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a (62) precathode system upstream of the deposition cathode or microwave generator, (a) impurities in the process gases, (b) contaminants from the walls of the deposition chamber and (c) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate (11). In this manner, higher order chains of the process gases are subjected to the upstream electromagnetic field and are therefore more easily broken down by the deposition cathode and deposited onto the substrate in desired lower order chains and compositions so as to provide improved electrical properties. |
| format | Patent |
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As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a (62) precathode system upstream of the deposition cathode or microwave generator, (a) impurities in the process gases, (b) contaminants from the walls of the deposition chamber and (c) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate (11). 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As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a (62) precathode system upstream of the deposition cathode or microwave generator, (a) impurities in the process gases, (b) contaminants from the walls of the deposition chamber and (c) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate (11). In this manner, higher order chains of the process gases are subjected to the upstream electromagnetic field and are therefore more easily broken down by the deposition cathode and deposited onto the substrate in desired lower order chains and compositions so as to provide improved electrical properties.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2CvAwMDU3MzQ3cuJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBAB8aBxI</recordid><startdate>19931022</startdate><enddate>19931022</enddate><creator>MASATSUGU IZU</creator><creator>PUREEMU NASU</creator><scope>EVB</scope></search><sort><creationdate>19931022</creationdate><title>JPH0576172B</title><author>MASATSUGU IZU ; PUREEMU NASU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0576172BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MASATSUGU IZU</creatorcontrib><creatorcontrib>PUREEMU NASU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MASATSUGU IZU</au><au>PUREEMU NASU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPH0576172B</title><date>1993-10-22</date><risdate>1993</risdate><abstract>In a apparatus for glow discharge deposition process gases are commonly introduced into a deposition chamber (29) from a gas manifold (36) disposed on the upstream side of a substrate (11). As the process gases are drawn across the surface of the substrate, they are continuously disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a (62) precathode system upstream of the deposition cathode or microwave generator, (a) impurities in the process gases, (b) contaminants from the walls of the deposition chamber and (c) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate (11). In this manner, higher order chains of the process gases are subjected to the upstream electromagnetic field and are therefore more easily broken down by the deposition cathode and deposited onto the substrate in desired lower order chains and compositions so as to provide improved electrical properties.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | JPH0576172B |
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