HEAT TREATMENT APPARATUS
PURPOSE:To improve the uniformity of films between object faces to be treated when the films are formed on a plurality of objects to be treated by using a plurality of treatment gases whose pyrolytic temperature is different. CONSTITUTION:A heat treatment apparatus is provided with the following: a...
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creator | USHIGAWA HARUNORI |
description | PURPOSE:To improve the uniformity of films between object faces to be treated when the films are formed on a plurality of objects to be treated by using a plurality of treatment gases whose pyrolytic temperature is different. CONSTITUTION:A heat treatment apparatus is provided with the following: a plurality of objects 11, to be treated, which are installed in a housing utensil 12 for the objects to be treated; a reaction tube 1 which houses the housing utensil 12 for the objects to be treated; a heating mechanism 6 installed so as to surround the reaction tube; and at least two gas supply parts which supply at least two treatment gases whose pyrolytic temperature is different. In the heat treatment apparatus, an excitation mechanism 20 which excites the treatment gas, whose pyrolytic temperature is high out of the treatment gases is installed in at least one of the gas supply part, and the treatment gas is excited preliminarily. |
format | Patent |
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CONSTITUTION:A heat treatment apparatus is provided with the following: a plurality of objects 11, to be treated, which are installed in a housing utensil 12 for the objects to be treated; a reaction tube 1 which houses the housing utensil 12 for the objects to be treated; a heating mechanism 6 installed so as to surround the reaction tube; and at least two gas supply parts which supply at least two treatment gases whose pyrolytic temperature is different. 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CONSTITUTION:A heat treatment apparatus is provided with the following: a plurality of objects 11, to be treated, which are installed in a housing utensil 12 for the objects to be treated; a reaction tube 1 which houses the housing utensil 12 for the objects to be treated; a heating mechanism 6 installed so as to surround the reaction tube; and at least two gas supply parts which supply at least two treatment gases whose pyrolytic temperature is different. In the heat treatment apparatus, an excitation mechanism 20 which excites the treatment gas, whose pyrolytic temperature is high out of the treatment gases is installed in at least one of the gas supply part, and the treatment gas is excited preliminarily.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDwcHUMUQgJApK-rn4hCo4BAY5BjiGhwTwMrGmJOcWpvFCam0HezTXE2UM3tSA_PrW4IDE5NS-1JN4rwMPA1MzC1MLRmLAKAIkfH0Q</recordid><startdate>19930114</startdate><enddate>19930114</enddate><creator>USHIGAWA HARUNORI</creator><scope>EVB</scope></search><sort><creationdate>19930114</creationdate><title>HEAT TREATMENT APPARATUS</title><author>USHIGAWA HARUNORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH056858A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>USHIGAWA HARUNORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>USHIGAWA HARUNORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HEAT TREATMENT APPARATUS</title><date>1993-01-14</date><risdate>1993</risdate><abstract>PURPOSE:To improve the uniformity of films between object faces to be treated when the films are formed on a plurality of objects to be treated by using a plurality of treatment gases whose pyrolytic temperature is different. CONSTITUTION:A heat treatment apparatus is provided with the following: a plurality of objects 11, to be treated, which are installed in a housing utensil 12 for the objects to be treated; a reaction tube 1 which houses the housing utensil 12 for the objects to be treated; a heating mechanism 6 installed so as to surround the reaction tube; and at least two gas supply parts which supply at least two treatment gases whose pyrolytic temperature is different. In the heat treatment apparatus, an excitation mechanism 20 which excites the treatment gas, whose pyrolytic temperature is high out of the treatment gases is installed in at least one of the gas supply part, and the treatment gas is excited preliminarily.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | HEAT TREATMENT APPARATUS |
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