SUPERCONDUCTING PHASE-CHANGE TYPE FET

PURPOSE:To realize a FET having for larger mutual conductance than the High Electron mobility Transistor (HEMT) heretofove in use. CONSTITUTION:After the first buffer layer 12 composed of an insulation layer containing SiN, etc., on a substrate 11 containing SrTiO3, the first and second semiconducto...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	YONEMITSU TOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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