MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To easily form an impurity layer in high concentration in a semiconductor layer, in a process of manufacturing a semiconductor device such as a field effect transistor, etc. CONSTITUTION:An ion blocking layer 2, which has an ion blocking function, and a semiconductor layer 3 are stacked in this order on a semiconductor substrate 1 ((a) and (b)), and then ions to become impurities are implanted (c). After activation of the implanted impurities, a crystal growth layer 4 is stacked (d). The implanted ions do not penetrate into the ion blocking layer 2, and impurities in high concentration are introduced in to the interface between the ion blocking layer 2 and the semiconductor layer 3.