SEMICONDUCTOR WAFER VAPOR GROWTH DEVICE
PURPOSE:To enable both a semiconductor wafer vapor growth device and especially a reaction oven to be simplified in structure. CONSTITUTION:A semiconductor wafer vapor growth device is equipped with of a susceptor 3 provided inside a vacuum chamber 2 in a rotatable manner, a receiving mechanism 15 a...
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| creator | NUMANAMI MASAE ISHIDA SADANORI KOMURA YUKIO |
| description | PURPOSE:To enable both a semiconductor wafer vapor growth device and especially a reaction oven to be simplified in structure. CONSTITUTION:A semiconductor wafer vapor growth device is equipped with of a susceptor 3 provided inside a vacuum chamber 2 in a rotatable manner, a receiving mechanism 15 arranged on each peripheral wall 3a of the susceptors 3, and a magnetic field generating means 4. The tray 17 of the receiving mechanism 15 is supported on the peripheral wall 3a in a freely rotatable manner through the intermediary of bearings, a bracket 13, and others. A metal plate is buried in the tray 17. The magnet units 32 and 33 of the magnetic field generating means 4 are controlled by a controller 34 so as to form rotating magnetic fields which rotate in opposite directions respectively. These rotating magnetic fields are made to change in magnetic flux taking advantage of electromagnetic induction to generate an prescribed electromagnetic force in the metal plate, whereby the tray 17 is made to rotate. On the other hand, when the susceptor 3 rotates, the receiving mechanisms 15 are made to revolve around a shaft 11. Therefore, a semiconductor wafer 20 held at the tray 17 revolves both around the shaft 11 and on its axis. |
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CONSTITUTION:A semiconductor wafer vapor growth device is equipped with of a susceptor 3 provided inside a vacuum chamber 2 in a rotatable manner, a receiving mechanism 15 arranged on each peripheral wall 3a of the susceptors 3, and a magnetic field generating means 4. The tray 17 of the receiving mechanism 15 is supported on the peripheral wall 3a in a freely rotatable manner through the intermediary of bearings, a bracket 13, and others. A metal plate is buried in the tray 17. The magnet units 32 and 33 of the magnetic field generating means 4 are controlled by a controller 34 so as to form rotating magnetic fields which rotate in opposite directions respectively. These rotating magnetic fields are made to change in magnetic flux taking advantage of electromagnetic induction to generate an prescribed electromagnetic force in the metal plate, whereby the tray 17 is made to rotate. On the other hand, when the susceptor 3 rotates, the receiving mechanisms 15 are made to revolve around a shaft 11. Therefore, a semiconductor wafer 20 held at the tray 17 revolves both around the shaft 11 and on its axis.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930108&DB=EPODOC&CC=JP&NR=H053157A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930108&DB=EPODOC&CC=JP&NR=H053157A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NUMANAMI MASAE</creatorcontrib><creatorcontrib>ISHIDA SADANORI</creatorcontrib><creatorcontrib>KOMURA YUKIO</creatorcontrib><title>SEMICONDUCTOR WAFER VAPOR GROWTH DEVICE</title><description>PURPOSE:To enable both a semiconductor wafer vapor growth device and especially a reaction oven to be simplified in structure. 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CONSTITUTION:A semiconductor wafer vapor growth device is equipped with of a susceptor 3 provided inside a vacuum chamber 2 in a rotatable manner, a receiving mechanism 15 arranged on each peripheral wall 3a of the susceptors 3, and a magnetic field generating means 4. The tray 17 of the receiving mechanism 15 is supported on the peripheral wall 3a in a freely rotatable manner through the intermediary of bearings, a bracket 13, and others. A metal plate is buried in the tray 17. The magnet units 32 and 33 of the magnetic field generating means 4 are controlled by a controller 34 so as to form rotating magnetic fields which rotate in opposite directions respectively. These rotating magnetic fields are made to change in magnetic flux taking advantage of electromagnetic induction to generate an prescribed electromagnetic force in the metal plate, whereby the tray 17 is made to rotate. On the other hand, when the susceptor 3 rotates, the receiving mechanisms 15 are made to revolve around a shaft 11. Therefore, a semiconductor wafer 20 held at the tray 17 revolves both around the shaft 11 and on its axis.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SEMICONDUCTOR WAFER VAPOR GROWTH DEVICE |
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