JPH053107B
PURPOSE:To make it possible to keep the temperature of a work being ion- implanted constant by making the back surface of a work holder, held with a work holder transfer device, capable of freely coming into contact with a tank in which a low temperature medium is introduced, and at the same time by...
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creator | FUDA TAKENOBU NAKAMORI YUKIO SAKURADA JUZO HOSHINO TAIZO FURUSAWA MOTOYOSHI KASHIMOTO KAZUHIRO SHIRO AIJI |
description | PURPOSE:To make it possible to keep the temperature of a work being ion- implanted constant by making the back surface of a work holder, held with a work holder transfer device, capable of freely coming into contact with a tank in which a low temperature medium is introduced, and at the same time by arranging a 1st radiation heating device located in front of the work and interlocked to a radiation thermometer. CONSTITUTION:A work holder 4 attached with a frame 3 is held with a work holder transfer device 20 while a cap 23 is held with a cap transfer device 24. Closing a door 25, inside air is discharged through a vacuum discharge hole 19. Opening a shutter valve 18, the work holder transfer device 20 is advanced into a vacuum ion implantation chamber 1 to transfer both the holder 4 and the work 3 both held with the device 20 to a work holder transfer device 8, the device 20 is retracted and the shutter valve 18 is closed. When the ion implantation to the work 3 is planned to be performed under a high temperature condition, a 1st radiation heating device 11 interlocked to a radiation thermometer 13 is turned on to heat the front surface of the work 3 to a specified temperature and then an ion beam 2 is irradiated. This makes it possible to perform the in implantation under a specified temperature condition. |
format | Patent |
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CONSTITUTION:A work holder 4 attached with a frame 3 is held with a work holder transfer device 20 while a cap 23 is held with a cap transfer device 24. Closing a door 25, inside air is discharged through a vacuum discharge hole 19. Opening a shutter valve 18, the work holder transfer device 20 is advanced into a vacuum ion implantation chamber 1 to transfer both the holder 4 and the work 3 both held with the device 20 to a work holder transfer device 8, the device 20 is retracted and the shutter valve 18 is closed. When the ion implantation to the work 3 is planned to be performed under a high temperature condition, a 1st radiation heating device 11 interlocked to a radiation thermometer 13 is turned on to heat the front surface of the work 3 to a specified temperature and then an ion beam 2 is irradiated. 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CONSTITUTION:A work holder 4 attached with a frame 3 is held with a work holder transfer device 20 while a cap 23 is held with a cap transfer device 24. Closing a door 25, inside air is discharged through a vacuum discharge hole 19. Opening a shutter valve 18, the work holder transfer device 20 is advanced into a vacuum ion implantation chamber 1 to transfer both the holder 4 and the work 3 both held with the device 20 to a work holder transfer device 8, the device 20 is retracted and the shutter valve 18 is closed. When the ion implantation to the work 3 is planned to be performed under a high temperature condition, a 1st radiation heating device 11 interlocked to a radiation thermometer 13 is turned on to heat the front surface of the work 3 to a specified temperature and then an ion beam 2 is irradiated. 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CONSTITUTION:A work holder 4 attached with a frame 3 is held with a work holder transfer device 20 while a cap 23 is held with a cap transfer device 24. Closing a door 25, inside air is discharged through a vacuum discharge hole 19. Opening a shutter valve 18, the work holder transfer device 20 is advanced into a vacuum ion implantation chamber 1 to transfer both the holder 4 and the work 3 both held with the device 20 to a work holder transfer device 8, the device 20 is retracted and the shutter valve 18 is closed. When the ion implantation to the work 3 is planned to be performed under a high temperature condition, a 1st radiation heating device 11 interlocked to a radiation thermometer 13 is turned on to heat the front surface of the work 3 to a specified temperature and then an ion beam 2 is irradiated. This makes it possible to perform the in implantation under a specified temperature condition.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
title | JPH053107B |
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