FERROELECTRIC MEMORY
PURPOSE:To increase the information quantity per unit cell by providing electrodes on a front side and a rear of a ferroelectric substance, applying a pulse electric field on a specified electrode and generating more than three values of polarization inversion state. CONSTITUTION:A ferroelectric cap...
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| creator | KANZAWA AKIRA |
| description | PURPOSE:To increase the information quantity per unit cell by providing electrodes on a front side and a rear of a ferroelectric substance, applying a pulse electric field on a specified electrode and generating more than three values of polarization inversion state. CONSTITUTION:A ferroelectric capacitor 3 has a large surface of electrode 6 on the surface of one ferroelectric substance and two pieces of a small surface area of electrodes 7, 8 adjacent to the rear side and the electrodes 7, 8 are connected to reference potential lines 4, 5. The lines 4, 5 hold the voltage pulse applied on them and the electrode 6 is connected to a bit line 1 via the source and the drain of a field-effect transistor FET 9. In the ferroelectric memory, one of the adjacent plural electrodes 7, 8 is specified and a pulse field applied between the electrode 6. Thus more than 3 places of polarization inversion state are obtained and the information quantity per unit of the capacitor 3 can be increased without increasing the cell area. |
| format | Patent |
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CONSTITUTION:A ferroelectric capacitor 3 has a large surface of electrode 6 on the surface of one ferroelectric substance and two pieces of a small surface area of electrodes 7, 8 adjacent to the rear side and the electrodes 7, 8 are connected to reference potential lines 4, 5. The lines 4, 5 hold the voltage pulse applied on them and the electrode 6 is connected to a bit line 1 via the source and the drain of a field-effect transistor FET 9. In the ferroelectric memory, one of the adjacent plural electrodes 7, 8 is specified and a pulse field applied between the electrode 6. Thus more than 3 places of polarization inversion state are obtained and the information quantity per unit of the capacitor 3 can be increased without increasing the cell area.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930205&DB=EPODOC&CC=JP&NR=H0528773A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930205&DB=EPODOC&CC=JP&NR=H0528773A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANZAWA AKIRA</creatorcontrib><title>FERROELECTRIC MEMORY</title><description>PURPOSE:To increase the information quantity per unit cell by providing electrodes on a front side and a rear of a ferroelectric substance, applying a pulse electric field on a specified electrode and generating more than three values of polarization inversion state. CONSTITUTION:A ferroelectric capacitor 3 has a large surface of electrode 6 on the surface of one ferroelectric substance and two pieces of a small surface area of electrodes 7, 8 adjacent to the rear side and the electrodes 7, 8 are connected to reference potential lines 4, 5. The lines 4, 5 hold the voltage pulse applied on them and the electrode 6 is connected to a bit line 1 via the source and the drain of a field-effect transistor FET 9. In the ferroelectric memory, one of the adjacent plural electrodes 7, 8 is specified and a pulse field applied between the electrode 6. Thus more than 3 places of polarization inversion state are obtained and the information quantity per unit of the capacitor 3 can be increased without increasing the cell area.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBxcw0K8nf1cXUOCfJ0VvB19fUPiuRhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GpkYW5ubGjsZEKAEAVCsenQ</recordid><startdate>19930205</startdate><enddate>19930205</enddate><creator>KANZAWA AKIRA</creator><scope>EVB</scope></search><sort><creationdate>19930205</creationdate><title>FERROELECTRIC MEMORY</title><author>KANZAWA AKIRA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0528773A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KANZAWA AKIRA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANZAWA AKIRA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FERROELECTRIC MEMORY</title><date>1993-02-05</date><risdate>1993</risdate><abstract>PURPOSE:To increase the information quantity per unit cell by providing electrodes on a front side and a rear of a ferroelectric substance, applying a pulse electric field on a specified electrode and generating more than three values of polarization inversion state. CONSTITUTION:A ferroelectric capacitor 3 has a large surface of electrode 6 on the surface of one ferroelectric substance and two pieces of a small surface area of electrodes 7, 8 adjacent to the rear side and the electrodes 7, 8 are connected to reference potential lines 4, 5. The lines 4, 5 hold the voltage pulse applied on them and the electrode 6 is connected to a bit line 1 via the source and the drain of a field-effect transistor FET 9. In the ferroelectric memory, one of the adjacent plural electrodes 7, 8 is specified and a pulse field applied between the electrode 6. Thus more than 3 places of polarization inversion state are obtained and the information quantity per unit of the capacitor 3 can be increased without increasing the cell area.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | FERROELECTRIC MEMORY |
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