JPH05235425
PURPOSE:To provide a superconducting photodetecting device which has low noise and high sensitivity even in a low frequency band by using an oxide superconductor polycrystalline thin film. CONSTITUTION:A superconducting photodetecting device 10 for detecting a variation in a gap voltage or a DC Jose...
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| creator | KARIMOTO SHINICHI TANABE KEIICHI ENOMOTO YOICHI |
| description | PURPOSE:To provide a superconducting photodetecting device which has low noise and high sensitivity even in a low frequency band by using an oxide superconductor polycrystalline thin film. CONSTITUTION:A superconducting photodetecting device 10 for detecting a variation in a gap voltage or a DC Josephson current value of a Josephson junction by irradiating with a light is formed of a Josephson junction formed in a crystalline grain boundary between a Ba1-xMxBiO3 (M=K, Rb:0.35 |
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CONSTITUTION:A superconducting photodetecting device 10 for detecting a variation in a gap voltage or a DC Josephson current value of a Josephson junction by irradiating with a light is formed of a Josephson junction formed in a crystalline grain boundary between a Ba1-xMxBiO3 (M=K, Rb:0.35<=X<=0.50) or BaPb1-yBiyO3 (0.25<=Y<=0.35) superconducting thin film photodetector 13 crossing a twin boundary 12 formed on a twin substrate 11 (in plane (001)), an Ag electrode 14 and thin film patterns 13a, 13b in such a manner that the grain boundary Josephson junction is formed only of a series connection row. The series connection row of the Josephson junction may be formed of a grain boundary Josephson junction to be formed on a crystalline grain boundary of an SrTiO3 twin substrate.</description><edition>5</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930910&DB=EPODOC&CC=JP&NR=H05235425A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930910&DB=EPODOC&CC=JP&NR=H05235425A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KARIMOTO SHINICHI</creatorcontrib><creatorcontrib>TANABE KEIICHI</creatorcontrib><creatorcontrib>ENOMOTO YOICHI</creatorcontrib><title>JPH05235425</title><description>PURPOSE:To provide a superconducting photodetecting device which has low noise and high sensitivity even in a low frequency band by using an oxide superconductor polycrystalline thin film. 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The series connection row of the Josephson junction may be formed of a grain boundary Josephson junction to be formed on a crystalline grain boundary of an SrTiO3 twin substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2CvAwMDUyNjUxMuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFIOhyNiVEDADxeG6Q</recordid><startdate>19930910</startdate><enddate>19930910</enddate><creator>KARIMOTO SHINICHI</creator><creator>TANABE KEIICHI</creator><creator>ENOMOTO YOICHI</creator><scope>EVB</scope></search><sort><creationdate>19930910</creationdate><title>JPH05235425</title><author>KARIMOTO SHINICHI ; TANABE KEIICHI ; ENOMOTO YOICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH05235425A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KARIMOTO SHINICHI</creatorcontrib><creatorcontrib>TANABE KEIICHI</creatorcontrib><creatorcontrib>ENOMOTO YOICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KARIMOTO SHINICHI</au><au>TANABE KEIICHI</au><au>ENOMOTO YOICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPH05235425</title><date>1993-09-10</date><risdate>1993</risdate><abstract>PURPOSE:To provide a superconducting photodetecting device which has low noise and high sensitivity even in a low frequency band by using an oxide superconductor polycrystalline thin film. CONSTITUTION:A superconducting photodetecting device 10 for detecting a variation in a gap voltage or a DC Josephson current value of a Josephson junction by irradiating with a light is formed of a Josephson junction formed in a crystalline grain boundary between a Ba1-xMxBiO3 (M=K, Rb:0.35<=X<=0.50) or BaPb1-yBiyO3 (0.25<=Y<=0.35) superconducting thin film photodetector 13 crossing a twin boundary 12 formed on a twin substrate 11 (in plane (001)), an Ag electrode 14 and thin film patterns 13a, 13b in such a manner that the grain boundary Josephson junction is formed only of a series connection row. The series connection row of the Josephson junction may be formed of a grain boundary Josephson junction to be formed on a crystalline grain boundary of an SrTiO3 twin substrate.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | JPH05235425 |
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