ELECTRON BEAM LITHOGRAPHIC DEVICE

PURPOSE:To lessen a time to take for shifting from an entire surface exposure process using ultraviolet rays to an exposure process using an electron beam and to suppress a change of a photoresist film with time during that time to the minimum by a method wherein a means for performing an entire surface exposure on the photoresist film using the ultraviolet rays is provided in a vacuum system of an electron beam ligthographic device. CONSTITUTION:Wafers to be treated pass through a wafer loader partition valve 10 and a first ultraviolet exposure sluice valve 7 one sheet by one sheet from a wafer loader 11 and are transferred to an ultraviolet exposure area 5. Parallel rays obtained by mercury-arc lamps in an ultraviolet optical unit 4 are made to pass through a quartz glass 6 and the wafers to be treated are exposed all over their surfaces. After being subjected to entire surface exposure using ultraviolet rays, the wafers pass through a second ultraviolet exposure sluice valve and an electron beam exposure sluice valve, are transferred and placed on a stage 2 and a pattern is drawn on the wafers with an electron beam. Thereby, a labor hour to take for conducting an entire surface exposure process using the ultraviolet rays by another device is saved.