SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PURPOSE:To make it possible the permittivity of silicon carbide ceramic having high thermal conductivity to be changeable by adding alumina on the ceramic. CONSTITUTION:A metallized film is formed on a sintered insulating substrate, which contains a main component of silicon carbide, and additional...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KAGOHARA HIROMI, MATSUMOTO TAKESHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KAGOHARA HIROMI
MATSUMOTO TAKESHI
description PURPOSE:To make it possible the permittivity of silicon carbide ceramic having high thermal conductivity to be changeable by adding alumina on the ceramic. CONSTITUTION:A metallized film is formed on a sintered insulating substrate, which contains a main component of silicon carbide, and additional components of beryllium and/or beryllium oxide and alumina. A semiconductor laser device is brazed to the metallized film. The aluminal content of the sintered compact is preferably 0.005-0.15wt.% of silicon carbide. Thermal conductivity of the sintered compact is not less than 2.0W/cm deg.C at room temperature. When this is used as a heat sink 2 of the semiconductor laser, fall of heat resistance and good heat sink effect can be obtained because of high thermal conductivity of the sintered compact. Occurrence of resonance within the package can effectively be suppressed because it is possible the permittivity of heat sink 2 to be changeable and high.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0464243A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0464243A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0464243A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GJmYmRibGjsZEKAEATLseeA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KAGOHARA HIROMI ; MATSUMOTO TAKESHI</creator><creatorcontrib>KAGOHARA HIROMI ; MATSUMOTO TAKESHI</creatorcontrib><description>PURPOSE:To make it possible the permittivity of silicon carbide ceramic having high thermal conductivity to be changeable by adding alumina on the ceramic. CONSTITUTION:A metallized film is formed on a sintered insulating substrate, which contains a main component of silicon carbide, and additional components of beryllium and/or beryllium oxide and alumina. A semiconductor laser device is brazed to the metallized film. The aluminal content of the sintered compact is preferably 0.005-0.15wt.% of silicon carbide. Thermal conductivity of the sintered compact is not less than 2.0W/cm deg.C at room temperature. When this is used as a heat sink 2 of the semiconductor laser, fall of heat resistance and good heat sink effect can be obtained because of high thermal conductivity of the sintered compact. Occurrence of resonance within the package can effectively be suppressed because it is possible the permittivity of heat sink 2 to be changeable and high.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920228&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0464243A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920228&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0464243A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAGOHARA HIROMI</creatorcontrib><creatorcontrib>MATSUMOTO TAKESHI</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>PURPOSE:To make it possible the permittivity of silicon carbide ceramic having high thermal conductivity to be changeable by adding alumina on the ceramic. CONSTITUTION:A metallized film is formed on a sintered insulating substrate, which contains a main component of silicon carbide, and additional components of beryllium and/or beryllium oxide and alumina. A semiconductor laser device is brazed to the metallized film. The aluminal content of the sintered compact is preferably 0.005-0.15wt.% of silicon carbide. Thermal conductivity of the sintered compact is not less than 2.0W/cm deg.C at room temperature. When this is used as a heat sink 2 of the semiconductor laser, fall of heat resistance and good heat sink effect can be obtained because of high thermal conductivity of the sintered compact. Occurrence of resonance within the package can effectively be suppressed because it is possible the permittivity of heat sink 2 to be changeable and high.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GJmYmRibGjsZEKAEATLseeA</recordid><startdate>19920228</startdate><enddate>19920228</enddate><creator>KAGOHARA HIROMI</creator><creator>MATSUMOTO TAKESHI</creator><scope>EVB</scope></search><sort><creationdate>19920228</creationdate><title>SEMICONDUCTOR DEVICE</title><author>KAGOHARA HIROMI ; MATSUMOTO TAKESHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0464243A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAGOHARA HIROMI</creatorcontrib><creatorcontrib>MATSUMOTO TAKESHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAGOHARA HIROMI</au><au>MATSUMOTO TAKESHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>1992-02-28</date><risdate>1992</risdate><abstract>PURPOSE:To make it possible the permittivity of silicon carbide ceramic having high thermal conductivity to be changeable by adding alumina on the ceramic. CONSTITUTION:A metallized film is formed on a sintered insulating substrate, which contains a main component of silicon carbide, and additional components of beryllium and/or beryllium oxide and alumina. A semiconductor laser device is brazed to the metallized film. The aluminal content of the sintered compact is preferably 0.005-0.15wt.% of silicon carbide. Thermal conductivity of the sintered compact is not less than 2.0W/cm deg.C at room temperature. When this is used as a heat sink 2 of the semiconductor laser, fall of heat resistance and good heat sink effect can be obtained because of high thermal conductivity of the sintered compact. Occurrence of resonance within the package can effectively be suppressed because it is possible the permittivity of heat sink 2 to be changeable and high.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH0464243A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T10%3A12%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAGOHARA%20HIROMI&rft.date=1992-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0464243A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true