MANUFACTURE OF MOS FET

PURPOSE:To realize a highly reliable MOS FET Of LDD structure only by an ordinary wafer process, by stacking a polysilicon gate on a source drain diffusion layer of low concentration, and covering a source drain diffusion layer of high concentration with a thick oxide film. CONSTITUTION:After a poly...

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Bibliographische Detailangaben

1. Verfasser:	INAMI NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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