FORMING METHOD OF POLYSCDE ELEMENT

FORMING METHOD OF POLYSCDE ELEMENT

PURPOSE:To prevent exfoliation and crack at an interface, by a method wherein, when a semiconductor film is polycrystallized after the semiconductor film of amorphous structure is formed, the semiconductor is made to generate volume contraction, and the contraction of a metal silicide film is cancel...

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1. Verfasser: HAIDA OSAMU
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PURPOSE:To prevent exfoliation and crack at an interface, by a method wherein, when a semiconductor film is polycrystallized after the semiconductor film of amorphous structure is formed, the semiconductor is made to generate volume contraction, and the contraction of a metal silicide film is canceled. CONSTITUTION:A semiconductor film 3 of amorphous structure is formed on the insulating film 2 of a semiconductor substrate 1, and a metal silicide film 4 is formed on the film 3. The semiconductor 3 of amorphous structure is polycrystallized by heat treatment. In this process, N-type or P-type impurity elements are diffused, so that the heat treatment to activate the impurities is used. When the semiconductor film 3 is polycrystallized by heat treatment, volume contraction is generated in the semiconductor film 3, and the contraction of the metal silicide film 4, which is the main cause of exfoliation and crack generated at the interface between the semiconductor film 3 and the metal silicide film 4, can be canceled. Thereby the distortion generated at the interface between both films can remarkably be relieved, so that the exfoliation and the crack at the interface can be prevented.
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CONSTITUTION:A semiconductor film 3 of amorphous structure is formed on the insulating film 2 of a semiconductor substrate 1, and a metal silicide film 4 is formed on the film 3. The semiconductor 3 of amorphous structure is polycrystallized by heat treatment. In this process, N-type or P-type impurity elements are diffused, so that the heat treatment to activate the impurities is used. When the semiconductor film 3 is polycrystallized by heat treatment, volume contraction is generated in the semiconductor film 3, and the contraction of the metal silicide film 4, which is the main cause of exfoliation and crack generated at the interface between the semiconductor film 3 and the metal silicide film 4, can be canceled. 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CONSTITUTION:A semiconductor film 3 of amorphous structure is formed on the insulating film 2 of a semiconductor substrate 1, and a metal silicide film 4 is formed on the film 3. The semiconductor 3 of amorphous structure is polycrystallized by heat treatment. In this process, N-type or P-type impurity elements are diffused, so that the heat treatment to activate the impurities is used. When the semiconductor film 3 is polycrystallized by heat treatment, volume contraction is generated in the semiconductor film 3, and the contraction of the metal silicide film 4, which is the main cause of exfoliation and crack generated at the interface between the semiconductor film 3 and the metal silicide film 4, can be canceled. Thereby the distortion generated at the interface between both films can remarkably be relieved, so that the exfoliation and the crack at the interface can be prevented.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FORMING METHOD OF POLYSCDE ELEMENT
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