JPH0426791B

JPH0426791B

PURPOSE:To increase the junction breakdown strength by enlarging the contact area of a part of semiconductor region as a protective resistor to which a high voltage is applied (in particular, a connecting region to an input pad). CONSTITUTION:Via a plurality of contact holes 28, an aluminum wiring 4...

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Hauptverfasser: YASHIKI NAOKI, UCHIBORI KYOBUMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator YASHIKI NAOKI
UCHIBORI KYOBUMI
description PURPOSE:To increase the junction breakdown strength by enlarging the contact area of a part of semiconductor region as a protective resistor to which a high voltage is applied (in particular, a connecting region to an input pad). CONSTITUTION:Via a plurality of contact holes 28, an aluminum wiring 4 is in contact with the input side of a resistor with an area sufficiently larger than the area with which an output side aluminum wiring 5 is in contact via a contact hole 29. Therefore, when a surge voltage is applied to an input pad 4, the surge current can be equally divided and supplied to a P-N junction part of input side of the resistor, because the contact part of the resistor 2 has a large area. Thereby, the destruction strength of the resistor 2 can be increased.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0426791BB2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0426791BB2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0426791BB23</originalsourceid><addsrcrecordid>eNrjZOD2CvAwMDEyM7c0dOJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBAB80hxL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JPH0426791B</title><source>esp@cenet</source><creator>YASHIKI NAOKI ; UCHIBORI KYOBUMI</creator><creatorcontrib>YASHIKI NAOKI ; UCHIBORI KYOBUMI</creatorcontrib><description>PURPOSE:To increase the junction breakdown strength by enlarging the contact area of a part of semiconductor region as a protective resistor to which a high voltage is applied (in particular, a connecting region to an input pad). CONSTITUTION:Via a plurality of contact holes 28, an aluminum wiring 4 is in contact with the input side of a resistor with an area sufficiently larger than the area with which an output side aluminum wiring 5 is in contact via a contact hole 29. Therefore, when a surge voltage is applied to an input pad 4, the surge current can be equally divided and supplied to a P-N junction part of input side of the resistor, because the contact part of the resistor 2 has a large area. Thereby, the destruction strength of the resistor 2 can be increased.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920508&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0426791B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19920508&amp;DB=EPODOC&amp;CC=JP&amp;NR=H0426791B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YASHIKI NAOKI</creatorcontrib><creatorcontrib>UCHIBORI KYOBUMI</creatorcontrib><title>JPH0426791B</title><description>PURPOSE:To increase the junction breakdown strength by enlarging the contact area of a part of semiconductor region as a protective resistor to which a high voltage is applied (in particular, a connecting region to an input pad). CONSTITUTION:Via a plurality of contact holes 28, an aluminum wiring 4 is in contact with the input side of a resistor with an area sufficiently larger than the area with which an output side aluminum wiring 5 is in contact via a contact hole 29. Therefore, when a surge voltage is applied to an input pad 4, the surge current can be equally divided and supplied to a P-N junction part of input side of the resistor, because the contact part of the resistor 2 has a large area. Thereby, the destruction strength of the resistor 2 can be increased.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2CvAwMDEyM7c0dOJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBAB80hxL</recordid><startdate>19920508</startdate><enddate>19920508</enddate><creator>YASHIKI NAOKI</creator><creator>UCHIBORI KYOBUMI</creator><scope>EVB</scope></search><sort><creationdate>19920508</creationdate><title>JPH0426791B</title><author>YASHIKI NAOKI ; UCHIBORI KYOBUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0426791BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YASHIKI NAOKI</creatorcontrib><creatorcontrib>UCHIBORI KYOBUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YASHIKI NAOKI</au><au>UCHIBORI KYOBUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPH0426791B</title><date>1992-05-08</date><risdate>1992</risdate><abstract>PURPOSE:To increase the junction breakdown strength by enlarging the contact area of a part of semiconductor region as a protective resistor to which a high voltage is applied (in particular, a connecting region to an input pad). CONSTITUTION:Via a plurality of contact holes 28, an aluminum wiring 4 is in contact with the input side of a resistor with an area sufficiently larger than the area with which an output side aluminum wiring 5 is in contact via a contact hole 29. Therefore, when a surge voltage is applied to an input pad 4, the surge current can be equally divided and supplied to a P-N junction part of input side of the resistor, because the contact part of the resistor 2 has a large area. Thereby, the destruction strength of the resistor 2 can be increased.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title JPH0426791B
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T08%3A27%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YASHIKI%20NAOKI&rft.date=1992-05-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH0426791BB2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true