SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To improve transfer efficiency and to prevent the breakdown of a gate oxide film by sufficiently boosting the gate voltage of a transfer transistor(TR) before activation of a sense amplifier and dropping the level after activation. CONSTITUTION:The gate voltage and word line level WL0 level of the transfer TR is set by being divided to the two levels; the level Vb1 before the activation of the sense amplifier and the level Vb after the activation. The level Vb2 is set at the level at which the gate oxide film is not broken down. The level is boosted by a word line boosting circuit WLDV before the activation of the sense amplifier and the level is dropped to the level Vb2 by a dropping circuit DWN after the activation of the sense amplifier, by which the transfer efficiency is improved without degrading the reliability and the gate oxide film is simultaneously prevented from breaking down.