FORMATION OF FILM
PURPOSE:To obtain a thin film at an arbitrary high impurity concentration by executing the following alternately: a process where a gas for film formation use and a gas for doping use are supplied to an atmosphere to be treated and a low-concentration layer whose impurity concentration is low is for...
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creator | USHIGAWA HARUNORI |
description | PURPOSE:To obtain a thin film at an arbitrary high impurity concentration by executing the following alternately: a process where a gas for film formation use and a gas for doping use are supplied to an atmosphere to be treated and a low-concentration layer whose impurity concentration is low is formed; and a process where a high- concentration layer whose impurity concentration is high is formed. CONSTITUTION:A process to supply a gas for film formation use and a process to stop the gas are executed alternately. Then, a polysilicon film 14 as a low- concentration phosphorus layer with which phosphorus at a low concentration has been doped and whose film thickness is at 2500Angstrom , a high-concentration phosphorus layer 15 which is composed of only phosphorus in this example and whose film thickness is thin at a thickness of, e.g. several Angstrom and a polysilicon film 16 as a low- concentration layer whose film thickness is at 500Angstrom are laminated on the surface of an SiO2 film 13 on a semiconductor wafer W as an object to be treated. This laminated body is heat-treated in an annealing furnace at 900 deg.C for 20 minutes. Then, the phosphorus inside the high-concentration phosphorus layer 15 is diffused to the low-concentration phosphorus layers 14, 16 on both sides, and a high-concentration phosphorus-doped polysilicon film whose film thickness is at 3000Angstrom can be obtained. |
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CONSTITUTION:A process to supply a gas for film formation use and a process to stop the gas are executed alternately. Then, a polysilicon film 14 as a low- concentration phosphorus layer with which phosphorus at a low concentration has been doped and whose film thickness is at 2500Angstrom , a high-concentration phosphorus layer 15 which is composed of only phosphorus in this example and whose film thickness is thin at a thickness of, e.g. several Angstrom and a polysilicon film 16 as a low- concentration layer whose film thickness is at 500Angstrom are laminated on the surface of an SiO2 film 13 on a semiconductor wafer W as an object to be treated. This laminated body is heat-treated in an annealing furnace at 900 deg.C for 20 minutes. Then, the phosphorus inside the high-concentration phosphorus layer 15 is diffused to the low-concentration phosphorus layers 14, 16 on both sides, and a high-concentration phosphorus-doped polysilicon film whose film thickness is at 3000Angstrom can be obtained.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920729&DB=EPODOC&CC=JP&NR=H04207024A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920729&DB=EPODOC&CC=JP&NR=H04207024A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>USHIGAWA HARUNORI</creatorcontrib><title>FORMATION OF FILM</title><description>PURPOSE:To obtain a thin film at an arbitrary high impurity concentration by executing the following alternately: a process where a gas for film formation use and a gas for doping use are supplied to an atmosphere to be treated and a low-concentration layer whose impurity concentration is low is formed; and a process where a high- concentration layer whose impurity concentration is high is formed. CONSTITUTION:A process to supply a gas for film formation use and a process to stop the gas are executed alternately. Then, a polysilicon film 14 as a low- concentration phosphorus layer with which phosphorus at a low concentration has been doped and whose film thickness is at 2500Angstrom , a high-concentration phosphorus layer 15 which is composed of only phosphorus in this example and whose film thickness is thin at a thickness of, e.g. several Angstrom and a polysilicon film 16 as a low- concentration layer whose film thickness is at 500Angstrom are laminated on the surface of an SiO2 film 13 on a semiconductor wafer W as an object to be treated. This laminated body is heat-treated in an annealing furnace at 900 deg.C for 20 minutes. 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CONSTITUTION:A process to supply a gas for film formation use and a process to stop the gas are executed alternately. Then, a polysilicon film 14 as a low- concentration phosphorus layer with which phosphorus at a low concentration has been doped and whose film thickness is at 2500Angstrom , a high-concentration phosphorus layer 15 which is composed of only phosphorus in this example and whose film thickness is thin at a thickness of, e.g. several Angstrom and a polysilicon film 16 as a low- concentration layer whose film thickness is at 500Angstrom are laminated on the surface of an SiO2 film 13 on a semiconductor wafer W as an object to be treated. This laminated body is heat-treated in an annealing furnace at 900 deg.C for 20 minutes. Then, the phosphorus inside the high-concentration phosphorus layer 15 is diffused to the low-concentration phosphorus layers 14, 16 on both sides, and a high-concentration phosphorus-doped polysilicon film whose film thickness is at 3000Angstrom can be obtained.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | FORMATION OF FILM |
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