SOLID-STATE INFRARED IMAGE SENSOR

PURPOSE:To prevent the decrease in S/N ratio due to insufficient device cooling or erroneous temperature measurement with dark current by forming a diffused layer with a high impurity concentration in a semiconductor substrate so that the diffused layer may serve as an optical black part that absorb...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NAGAYOSHI SHINSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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