RESIST REMOVING METHOD

PURPOSE:To process a wafer provided with resist in which high concentration ions are implanted, while high throughput is maintained, by installing a treating chamber at a low temperature and a treating chamber at a high temperature, and executing two-stage processing. CONSTITUTION:A wafer 6 provided...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	OGURA TAKEISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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