RESIST REMOVING METHOD

PURPOSE:To process a wafer provided with resist in which high concentration ions are implanted, while high throughput is maintained, by installing a treating chamber at a low temperature and a treating chamber at a high temperature, and executing two-stage processing. CONSTITUTION:A wafer 6 provided with resist is set on a wafer load part 11. A carrying robot 12 holds the wafer 6, carries it in a low temperature treating chamber 2, and sets the wafer. In the low temperature treating chamber 2, a stage 14 is heated by a heater 15, at a temperature lower than or equal to 100 deg.C. The temperature of the wafer 6 becomes nearly equal to the stage. Ozone is blown against the wafer 6 from an ozone jetting plate 16. By spouting the ozone for about 20-30 seconds, the resist 4 which is cured by high concentration ion implantation is eliminated. The wafer 6 is held by a carrying robot 11, and transferred to a high temperature treating part 3, in which the wafer is heated at about 300 deg.C by a heater 15. Said process is continued until the resist 5 is completely eliminated.