THERMAL HEAD
PURPOSE:To make it easy for static electricity generated in an antifriction layer to escape by constituting the antifriction layer from a composition consisting of lanthanum, silicon, oxygen and nitrogen with boron carbide added thereto. CONSTITUTION:A heating element 2 composed of polysilicon, elec...
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creator | KUNIMATSU SATOSHI ARAI MICHIO SUGIURA KAZUJI ENDOU TSUKIMI |
description | PURPOSE:To make it easy for static electricity generated in an antifriction layer to escape by constituting the antifriction layer from a composition consisting of lanthanum, silicon, oxygen and nitrogen with boron carbide added thereto. CONSTITUTION:A heating element 2 composed of polysilicon, electrode 3 and antifriction layer 4 are formed on a glaze layer formed on the top of a ceramic substrate 1. For the purpose of obtaining this antifriction layer 4, powders of La2O3, Si3N4 and SiO2 are mixed in the molar ratio of (5-10):(10-30):(30-50), this mixture is pressed into a first target, a sintered body of B4C is used as a second target, and LaSiON layer, which is reciprocated on the first and second targets and is obtained by the first target after RF sputtering of respective targets, and the second target B4C laminated body are obtained, formed into a film and heat-treated so that respective targets are dissipated mutually. Thus, the specific resistance of the antifriction layer of a thermal head is lowered so that it is possible to prevent an electrostatic destruction. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH0419157A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH0419157A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH0419157A3</originalsourceid><addsrcrecordid>eNrjZOAJ8XAN8nX0UfBwdXThYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgEeBiaGloam5o7GRCgBAFDSHAg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>THERMAL HEAD</title><source>esp@cenet</source><creator>KUNIMATSU SATOSHI ; ARAI MICHIO ; SUGIURA KAZUJI ; ENDOU TSUKIMI</creator><creatorcontrib>KUNIMATSU SATOSHI ; ARAI MICHIO ; SUGIURA KAZUJI ; ENDOU TSUKIMI</creatorcontrib><description>PURPOSE:To make it easy for static electricity generated in an antifriction layer to escape by constituting the antifriction layer from a composition consisting of lanthanum, silicon, oxygen and nitrogen with boron carbide added thereto. CONSTITUTION:A heating element 2 composed of polysilicon, electrode 3 and antifriction layer 4 are formed on a glaze layer formed on the top of a ceramic substrate 1. For the purpose of obtaining this antifriction layer 4, powders of La2O3, Si3N4 and SiO2 are mixed in the molar ratio of (5-10):(10-30):(30-50), this mixture is pressed into a first target, a sintered body of B4C is used as a second target, and LaSiON layer, which is reciprocated on the first and second targets and is obtained by the first target after RF sputtering of respective targets, and the second target B4C laminated body are obtained, formed into a film and heat-treated so that respective targets are dissipated mutually. Thus, the specific resistance of the antifriction layer of a thermal head is lowered so that it is possible to prevent an electrostatic destruction.</description><language>eng</language><subject>CORRECTION OF TYPOGRAPHICAL ERRORS ; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME ; LINING MACHINES ; PERFORMING OPERATIONS ; PRINTING ; SELECTIVE PRINTING MECHANISMS ; STAMPS ; TRANSPORTING ; TYPEWRITERS</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920123&DB=EPODOC&CC=JP&NR=H0419157A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920123&DB=EPODOC&CC=JP&NR=H0419157A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUNIMATSU SATOSHI</creatorcontrib><creatorcontrib>ARAI MICHIO</creatorcontrib><creatorcontrib>SUGIURA KAZUJI</creatorcontrib><creatorcontrib>ENDOU TSUKIMI</creatorcontrib><title>THERMAL HEAD</title><description>PURPOSE:To make it easy for static electricity generated in an antifriction layer to escape by constituting the antifriction layer from a composition consisting of lanthanum, silicon, oxygen and nitrogen with boron carbide added thereto. CONSTITUTION:A heating element 2 composed of polysilicon, electrode 3 and antifriction layer 4 are formed on a glaze layer formed on the top of a ceramic substrate 1. For the purpose of obtaining this antifriction layer 4, powders of La2O3, Si3N4 and SiO2 are mixed in the molar ratio of (5-10):(10-30):(30-50), this mixture is pressed into a first target, a sintered body of B4C is used as a second target, and LaSiON layer, which is reciprocated on the first and second targets and is obtained by the first target after RF sputtering of respective targets, and the second target B4C laminated body are obtained, formed into a film and heat-treated so that respective targets are dissipated mutually. Thus, the specific resistance of the antifriction layer of a thermal head is lowered so that it is possible to prevent an electrostatic destruction.</description><subject>CORRECTION OF TYPOGRAPHICAL ERRORS</subject><subject>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</subject><subject>LINING MACHINES</subject><subject>PERFORMING OPERATIONS</subject><subject>PRINTING</subject><subject>SELECTIVE PRINTING MECHANISMS</subject><subject>STAMPS</subject><subject>TRANSPORTING</subject><subject>TYPEWRITERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAJ8XAN8nX0UfBwdXThYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgEeBiaGloam5o7GRCgBAFDSHAg</recordid><startdate>19920123</startdate><enddate>19920123</enddate><creator>KUNIMATSU SATOSHI</creator><creator>ARAI MICHIO</creator><creator>SUGIURA KAZUJI</creator><creator>ENDOU TSUKIMI</creator><scope>EVB</scope></search><sort><creationdate>19920123</creationdate><title>THERMAL HEAD</title><author>KUNIMATSU SATOSHI ; ARAI MICHIO ; SUGIURA KAZUJI ; ENDOU TSUKIMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0419157A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>CORRECTION OF TYPOGRAPHICAL ERRORS</topic><topic>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</topic><topic>LINING MACHINES</topic><topic>PERFORMING OPERATIONS</topic><topic>PRINTING</topic><topic>SELECTIVE PRINTING MECHANISMS</topic><topic>STAMPS</topic><topic>TRANSPORTING</topic><topic>TYPEWRITERS</topic><toplevel>online_resources</toplevel><creatorcontrib>KUNIMATSU SATOSHI</creatorcontrib><creatorcontrib>ARAI MICHIO</creatorcontrib><creatorcontrib>SUGIURA KAZUJI</creatorcontrib><creatorcontrib>ENDOU TSUKIMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUNIMATSU SATOSHI</au><au>ARAI MICHIO</au><au>SUGIURA KAZUJI</au><au>ENDOU TSUKIMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THERMAL HEAD</title><date>1992-01-23</date><risdate>1992</risdate><abstract>PURPOSE:To make it easy for static electricity generated in an antifriction layer to escape by constituting the antifriction layer from a composition consisting of lanthanum, silicon, oxygen and nitrogen with boron carbide added thereto. CONSTITUTION:A heating element 2 composed of polysilicon, electrode 3 and antifriction layer 4 are formed on a glaze layer formed on the top of a ceramic substrate 1. For the purpose of obtaining this antifriction layer 4, powders of La2O3, Si3N4 and SiO2 are mixed in the molar ratio of (5-10):(10-30):(30-50), this mixture is pressed into a first target, a sintered body of B4C is used as a second target, and LaSiON layer, which is reciprocated on the first and second targets and is obtained by the first target after RF sputtering of respective targets, and the second target B4C laminated body are obtained, formed into a film and heat-treated so that respective targets are dissipated mutually. Thus, the specific resistance of the antifriction layer of a thermal head is lowered so that it is possible to prevent an electrostatic destruction.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CORRECTION OF TYPOGRAPHICAL ERRORS i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME LINING MACHINES PERFORMING OPERATIONS PRINTING SELECTIVE PRINTING MECHANISMS STAMPS TRANSPORTING TYPEWRITERS |
title | THERMAL HEAD |
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