MANUFACTURE OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

PURPOSE:To stabilize electric characteristics by leaving an N region on the source side of a memory cell, in a self-alignment manner. CONSTITUTION:After a floating gate is formed via a gate oxide film 1, an N region 3 is formed by implanting arsenic or phosphorus. After a source side region S is cov...

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Bibliographische Detailangaben
1. Verfasser:	YOSHIMI MASANORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To stabilize electric characteristics by leaving an N region on the source side of a memory cell, in a self-alignment manner. CONSTITUTION:After a floating gate is formed via a gate oxide film 1, an N region 3 is formed by implanting arsenic or phosphorus. After a source side region S is covered with a photoresist 4 by photolithography, a source-drain N region 5 is formed by implanting arsenic. After an HTO film 6 is etched back and a side wall 6a is formed on a floating gate 2, an N region 3a on the source side and a source-drain region are formed in a self-alignment manner by implanting arsenic. Thereby the irregularity of the width A of the N region 3a can be restrained, so that electric characteristics of a memory cell can be stabilized.