DISTORTED QUANTUM WELL SEMICONDUCTOR LASER ELEMENT

PURPOSE:To narrow a half value of total angle of a far field pattern of a lateral mode in an active layer in a vertical direction and to form an optical beam to be oscillated in a circular shape by providing a light confinement layer made of InGaAsP between the active layer and a clad layer. CONSTIT...

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Bibliographische Detailangaben

Hauptverfasser:	OKUBO NORIO, IJICHI TETSURO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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