SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE
PURPOSE:To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifyin...
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| creator | TSUJI SHINJI AIKI KUNIO |
| description | PURPOSE:To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifying device toward the output side. CONSTITUTION:When the reflection factor of each waveguide end is |
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CONSTITUTION:When the reflection factor of each waveguide end is <=1%, the injected carrier density dependency of a gain spectrum increases in the injected carrier density and the wavelength lambdap at which the gain by band filling becomes maximum shifts to the short-wavelength side. When incident light is denoted as lambdain, the relative wavelength difference DELTAlambda=lambdain-lambdap from lambdap increases as the injected carrier density nc is increased. Then, the gain saturation coefficient is decreased as DELTAlambda increases. Namely, the least saturation is obtained when the carrier density is maximum, so high output is expected. For the purpose, the injection density is made small on the light input side where the light intensity is low and increased toward the output end where the light is intense to generate a light output which is saturated in gain by using an optical amplifier 11, a diffraction grating 12, and a power meter 13. Therefore, the optical amplifier device which outputs with high output is obtained.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910422&DB=EPODOC&CC=JP&NR=H0396928A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910422&DB=EPODOC&CC=JP&NR=H0396928A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUJI SHINJI</creatorcontrib><creatorcontrib>AIKI KUNIO</creatorcontrib><title>SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE</title><description>PURPOSE:To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifying device toward the output side. CONSTITUTION:When the reflection factor of each waveguide end is <=1%, the injected carrier density dependency of a gain spectrum increases in the injected carrier density and the wavelength lambdap at which the gain by band filling becomes maximum shifts to the short-wavelength side. When incident light is denoted as lambdain, the relative wavelength difference DELTAlambda=lambdain-lambdap from lambdap increases as the injected carrier density nc is increased. Then, the gain saturation coefficient is decreased as DELTAlambda increases. Namely, the least saturation is obtained when the carrier density is maximum, so high output is expected. For the purpose, the injection density is made small on the light input side where the light intensity is low and increased toward the output end where the light is intense to generate a light output which is saturated in gain by using an optical amplifier 11, a diffraction grating 12, and a power meter 13. Therefore, the optical amplifier device which outputs with high output is obtained.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFALdvX1dPb3cwl1DvEPUvAPCPF0dvRRcPQN8PF083QNUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAR4GxpZmlkYWjsZEKAEAlFMjiw</recordid><startdate>19910422</startdate><enddate>19910422</enddate><creator>TSUJI SHINJI</creator><creator>AIKI KUNIO</creator><scope>EVB</scope></search><sort><creationdate>19910422</creationdate><title>SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE</title><author>TSUJI SHINJI ; AIKI KUNIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0396928A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>TSUJI SHINJI</creatorcontrib><creatorcontrib>AIKI KUNIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSUJI SHINJI</au><au>AIKI KUNIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE</title><date>1991-04-22</date><risdate>1991</risdate><abstract>PURPOSE:To obtain an optical amplifier device which operates with high output by setting the reflection factor of each waveguide end to less than a specific percentage, increasing injected carrier density from an input end to an output end, and increasing the carrier density of the optical amplifying device toward the output side. CONSTITUTION:When the reflection factor of each waveguide end is <=1%, the injected carrier density dependency of a gain spectrum increases in the injected carrier density and the wavelength lambdap at which the gain by band filling becomes maximum shifts to the short-wavelength side. When incident light is denoted as lambdain, the relative wavelength difference DELTAlambda=lambdain-lambdap from lambdap increases as the injected carrier density nc is increased. Then, the gain saturation coefficient is decreased as DELTAlambda increases. Namely, the least saturation is obtained when the carrier density is maximum, so high output is expected. For the purpose, the injection density is made small on the light input side where the light intensity is low and increased toward the output end where the light is intense to generate a light output which is saturated in gain by using an optical amplifier 11, a diffraction grating 12, and a power meter 13. Therefore, the optical amplifier device which outputs with high output is obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE |
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