OPTICAL SWITCH AND MANUFACTURE THEREOF
PURPOSE:To attain high-speed switching at a high extinction ratio by forming the semiconductor substrate of a III-VI compd. semiconductor and forming the optical waveguides of a II-VI compd. semiconductor. CONSTITUTION:The semiconductor substrate of an optical directional coupler which is constitute...
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| creator | IWANO HIDEAKI |
| description | PURPOSE:To attain high-speed switching at a high extinction ratio by forming the semiconductor substrate of a III-VI compd. semiconductor and forming the optical waveguides of a II-VI compd. semiconductor. CONSTITUTION:The semiconductor substrate of an optical directional coupler which is constituted by providing the two optical waveguides which are nearly equal in propagation constant in parallel and proximity to each other on the crystal semiconductor substrate, constituted of the III-VI compd. semiconductor and the optical waveguides are constituted of the II-VI compd. semiconductor. For example, the optical waveguides 102, 103 constituted of ZnSSe are disposed on the substrate 101 constituted of the single crystal of (n) type GaAs. Since the optical waveguides are constituted of the thin film of the II-VI compd. semiconductor of the single crystal in such a manner, the propagation loss of light is lessened and the noise level is lowered below the level of signal light. The switching characteristics of the high extinction ratio are thus obtd. |
| format | Patent |
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CONSTITUTION:The semiconductor substrate of an optical directional coupler which is constituted by providing the two optical waveguides which are nearly equal in propagation constant in parallel and proximity to each other on the crystal semiconductor substrate, constituted of the III-VI compd. semiconductor and the optical waveguides are constituted of the II-VI compd. semiconductor. For example, the optical waveguides 102, 103 constituted of ZnSSe are disposed on the substrate 101 constituted of the single crystal of (n) type GaAs. Since the optical waveguides are constituted of the thin film of the II-VI compd. semiconductor of the single crystal in such a manner, the propagation loss of light is lessened and the noise level is lowered below the level of signal light. The switching characteristics of the high extinction ratio are thus obtd.</description><language>eng</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910412&DB=EPODOC&CC=JP&NR=H0387725A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910412&DB=EPODOC&CC=JP&NR=H0387725A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWANO HIDEAKI</creatorcontrib><title>OPTICAL SWITCH AND MANUFACTURE THEREOF</title><description>PURPOSE:To attain high-speed switching at a high extinction ratio by forming the semiconductor substrate of a III-VI compd. semiconductor and forming the optical waveguides of a II-VI compd. semiconductor. CONSTITUTION:The semiconductor substrate of an optical directional coupler which is constituted by providing the two optical waveguides which are nearly equal in propagation constant in parallel and proximity to each other on the crystal semiconductor substrate, constituted of the III-VI compd. semiconductor and the optical waveguides are constituted of the II-VI compd. semiconductor. For example, the optical waveguides 102, 103 constituted of ZnSSe are disposed on the substrate 101 constituted of the single crystal of (n) type GaAs. Since the optical waveguides are constituted of the thin film of the II-VI compd. semiconductor of the single crystal in such a manner, the propagation loss of light is lessened and the noise level is lowered below the level of signal light. The switching characteristics of the high extinction ratio are thus obtd.</description><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzDwjxdHb0UQgO9wxx9lBw9HNR8HX0C3VzdA4JDXJVCPFwDXL1d-NhYE1LzClO5YXS3AwKbq5A9bqpBfnxqcUFicmpeakl8V4BHgbGFubmRqaOxkQoAQCEfiNm</recordid><startdate>19910412</startdate><enddate>19910412</enddate><creator>IWANO HIDEAKI</creator><scope>EVB</scope></search><sort><creationdate>19910412</creationdate><title>OPTICAL SWITCH AND MANUFACTURE THEREOF</title><author>IWANO HIDEAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH0387725A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>IWANO HIDEAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IWANO HIDEAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OPTICAL SWITCH AND MANUFACTURE THEREOF</title><date>1991-04-12</date><risdate>1991</risdate><abstract>PURPOSE:To attain high-speed switching at a high extinction ratio by forming the semiconductor substrate of a III-VI compd. semiconductor and forming the optical waveguides of a II-VI compd. semiconductor. CONSTITUTION:The semiconductor substrate of an optical directional coupler which is constituted by providing the two optical waveguides which are nearly equal in propagation constant in parallel and proximity to each other on the crystal semiconductor substrate, constituted of the III-VI compd. semiconductor and the optical waveguides are constituted of the II-VI compd. semiconductor. For example, the optical waveguides 102, 103 constituted of ZnSSe are disposed on the substrate 101 constituted of the single crystal of (n) type GaAs. Since the optical waveguides are constituted of the thin film of the II-VI compd. semiconductor of the single crystal in such a manner, the propagation loss of light is lessened and the noise level is lowered below the level of signal light. The switching characteristics of the high extinction ratio are thus obtd.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | OPTICAL SWITCH AND MANUFACTURE THEREOF |
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